MOSFET Specified, P-Channel, POWERTRENCH 1.8 V FDG6316P General Description www.onsemi.com This P Channel 1.8 V specified MOSFET uses ONSemiconductors advanced low voltage POWERTRENCH S process. It has been optimized for battery power management G D applications. D Features G S Pin 1 0.7 A, 12 V SC88/SC706/SOT363 R = 270 m V = 4.5 V DS(ON) GS CASE 419B02 R = 360 m V = 2.5 V DS(ON) GS R = 650 m V = 1.8 V DS(ON) GS MARKING DIAGRAM Low Gate Charge High Performance Trench Technology for Extremely Low R DS(ON) Compact Industry Standard SC706 Surface Mount Package 16M These Devices are PbFree and are RoHS Compliant Applications Battery Management 16 = Specific Device Code M = Assembly Operation Month Load Switch PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Units V DrainSource Voltage 12 V DSS S 1 or 4 6 or 3 D V GateSource Voltage 8 V GSS I Drain Current Continuous 0.7 A D (Note 1) G 2 or 5 5 or 2 G Pulsed 1.8 P Power Dissipation for (Note 1) 0.3 W D 3 or 6 4 or 1 S D Single Operation T , T Operating and Storage Junction 55 to +150 C J STG Temperature Range The pinouts are symmetrical pin 1 and 4 are interchangeable Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, JunctiontoAmbient (Note 1) 415 C/W JA 1. R is the sum of the junctiontocase and casetoambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board design. R = 415C/W when JC JA JA mounted on a minimum pad of FR4 PCB on still air environment. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: June, 2020 Rev. 4 FDG6316P/DFDG6316P PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Reel Size Tape Width Shipping 16 FDG6316P 7 8 mm 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV DrainSource Breakdown Voltage V =0V, I = 250 A 12 V DSS GS D BV / T Breakdown Voltage Temperature I = 250 A, Referenced to 25 C 3.7 mV/ C DSS J D Coefficient I Zero Gate Voltage Drain Current V = 10 V, V =0V 1 A DSS DS GS I GateBody Leakage, Forward V = 8V, V =0V 100 nA GSSF GS DS I GateBody Leakage, Reverse V =8V, V =0V 100 nA GSSR GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V =V , I = 250 A 0.4 0.6 1.5 V GS(th) DS GS D V / T Gate Threshold Voltage I = 250 A, Referenced to 25 C 2 mV/ C GS(th) J D Temperature Coefficient R Static DrainSource V = 4.5 V, I = 0.7 A 221 370 m DS(on) GS D OnResistance V = 2.5 V, I = 0.5 A 297 360 GS D V = 1.8 V, I = 0.4 A 427 650 GS D V = 4.5 V, I = 0.7 A, T = 125 C 250 348 GS D J I OnState Drain Current V = 4.5 V, V = 5V 1.8 A D(on) GS DS g Forward Transconductance V = 5V, I = 0.7 A 2.5 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 6V, V = 0 V, f = 1.0 MHz 146 pF iss DS GS C Output Capacitance 60 pF oss C Reverse Transfer Capacitance 48 pF rss SWITCHING CHARACTERISTICS (Note 2) t Turn-On Delay Time V = 6V, I = 1A, 5 10 ns d(on) DD D V = 4.5 V, R =6 GS GEN t Turn-On Rise Time 13 23 ns r t Turn-Off Delay Time 8 16 ns d(off) t Turn-Off Fall Time 2 4 ns f Q Total Gate Charge V = 6V, I = 0.7 A, 1.7 2.4 nC g DS D V = 4.5 V GS Q GateSource Charge 0.3 nC gs Q GateDrain Charge 0.4 nC gd DRAINSOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous DrainSource Diode Forward Current 0.25 A S V DrainSource Diode Forward V =0V, I = 0.25 A (Note 2) 0.7 1.2 V SD GS S Voltage Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% www.onsemi.com 2