MOSFET N-Channel, POWERTRENCH 20 V FDG6335N General Description www.onsemi.com This NChannel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either S G synchronous or conventional switching PWM controllers. It has been D optimized use in small switching regulators, providing an extremely low R and gate charge (QG) in a small package. D DS(ON) G S Pin 1 Features SC88/SC706/SOT363 0.7 A, 20 V CASE 419B02 R = 300 m V = 4.5 V DS(ON) GS MARKING DIAGRAM R = 400 m V = 2.5 V DS(ON) GS Low Gate Charge (1.1 nC Typical) High Performance Trench Technology for Extremely Low R DS(ON) 35M Compact Industry Standard SC706 Surface Mount Package These Devices are PbFree and are RoHS Compliant 35 = Specific Device Code Applications M = Assembly Operation Month DC/DC Converter Power Management PIN CONNECTIONS Loadswitch S 1 or 4 6 or 3 D ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Units V DrainSource Voltage 20 V G 2 or 5 5 or 2 G DSS V GateSource Voltage 12 V GSS I Drain Current Continuous 0.7 A D D 3 or 6 4 or 1 S (Note 1) Pulsed 2.1 Dual NChannel P Power Dissipation for (Note 1) 0.3 W D Single Operation The pinouts are symmetrical pin 1 and 4 are interchangeable T , T Operating and Storage Junction 55 to +150 C J STG Temperature Range ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering and shipping information on page 2 of device. If any of these limits are exceeded, device functionality should not be this data sheet. assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, JunctiontoAmbient (Note 1) 415 C/W JA 1. R is the sum of the junctiontocase and casetoambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board design. R = 415C/W when JC JA JA mounted on a minimum pad. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: June, 2020 Rev. 3 FDG6335N/DFDG6335N PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Reel Size Tape Width Shipping 35 FDG6335N 7 8 mm 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV DrainSource Breakdown Voltage V =0V, I = 250 A 20 V DSS GS D BV / T Breakdown Voltage Temperature I = 250 A, Referenced to 25 C 14 mV/ C DSS J D Coefficient I Zero Gate Voltage Drain Current V =16V, V =0V 1 A DSS DS GS I GateBody Leakage, Forward V =12V, V =0V 100 nA GSSF GS DS I GateBody Leakage, Reverse V = 12 V, V =0V 100 nA GSSR GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V =V , I = 250 A 0.6 1.1 1.5 V GS(th) DS GS D V / T Gate Threshold Voltage I = 250 A, Referenced to 25 C 2.8 mV/ C GS(th) J D Temperature Coefficient R Static DrainSource V = 4.5 V, I = 0.7 A 180 300 m DS(on) GS D OnResistance V = 2.5 V, I = 0.6 A 293 400 GS D V = 4.5 V, I = 0.7 A, T = 125 C 247 442 GS D J I OnState Drain Current V = 4.5 V, V =5V 1 A D(on) GS DS g Forward Transconductance V =5V, I = 0.7 A 2.8 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V =10V, V = 0 V, f = 1.0 MHz 113 pF iss DS GS C Output Capacitance 34 pF oss C Reverse Transfer Capacitance 16 pF rss SWITCHING CHARACTERISTICS (Note 2) t Turn-On Delay Time V =10V, I =1A, 5 10 ns DD D d(on) V = 4.5 V, R =6 GS GEN t Turn-On Rise Time 7 15 ns r t Turn-Off Delay Time 9 18 ns d(off) t Turn-Off Fall Time 1.5 3 ns f Q Total Gate Charge V =10V, I = 0.7 A, 1.1 1.4 nC g DS D V = 4.5 V GS Q GateSource Charge 0.24 nC gs Q GateDrain Charge 0.3 nC gd DRAINSOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous DrainSource Diode Forward Current 0.25 A S V DrainSource Diode Forward V =0V, I = 0.25 A (Note 2) 0.74 1.2 V SD GS S Voltage Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% www.onsemi.com 2