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FDMA1025P Dual P-Channel PowerTrench MOSFET July 2014 FDMA1025P Dual P-Channel PowerTrench MOSFET 20V,3.1A, 155m: Features General Description Max r = 155m : at V = 4.5V, I = 3.1A This device is designed specifically as a single package solution DS(on) GS D for the battery charge switch in cellular handset and other ultra - Max r = 220m : at V = 2.5V, I = 2.3A DS(on) GS D portable applications. It features two independent P-Channel Low profile - 0.8mm maximum - in the new package MicroFET MOSFETs with low on-state resistance for minimum conduction 2X2 mm losses. When connected in the typical common source configuration, bi-directional current flow is possible. RoHS Compliant The MicroFET 2X2 package offers exceptional thermal Free from halogenated compounds and antimony performance for its physical size and well suited to linear mode oxides applications. Application DC - DC Conversion PIN 1 S1 G1 D2 1 6 S1 D1 D2 D1 5 G2 G1 2 D2 4 3 S2 D1 G2 S2 MicroFET 2X2 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DS V Gate to Source Voltage 12 V GS Drain Current -Continuous (Note 1a) 3.1 I A D -Pulsed 6 Power Dissipation for Single Operation (Note 1a) 1.4 P W D Power Dissipation (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance Single Operation, Junction to Ambient (Note 1a) 86 T JA R Thermal Resistance Single Operation, Junction to Ambient (Note 1b) 173 T JA C/W R Thermal Resistance Dual Operation, Junction to Ambient (Note 1c) 69 T JA R Thermal Resistance Dual Operation, Junction to Ambient (Note 1d) 151 T JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 025 FDMA1025P MicroFET 2X2 7 8mm 3000 units 2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMA1025P Rev.B5 4 3 5 2 6 1