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This literature is subject to all applicable copyright laws and is not for resale in any manner.FDMA2002NZ Dual N-Channel PowerTrench MOSFET July 2014 FDMA2002NZ Dual N-Channel PowerTrench MOSFET General Description Features x 2.9 A, 30 V R = 123 m : V = 4.5 V DS(ON) GS This device is designed specifically as a single package R = 140 m : V = 3.0 V DS(ON) GS solution for dual switching requirements in cellular R = 163 m : V = 2.5 V DS(ON) GS handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with x Low profile 0.8 mm maximum in the new package MicroFET 2x2 mm low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal x HBM ESD protection level = 1.8kV (Note 3) performance for its physical size and is well suited to x RoHS Compliant linear mode applications. Free from halogenated compounds and antimony oxides PIN 1 S1 G1 D2 D1 S1 1 6 D1 D2 G1 2 5 G2 3 D2 4 S2 D1 G2 S2 MicroFET 2x2 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DS V Gate-Source Voltage V GS r 12 I Drain Current Continuous (T = 25C, V = 4.5V) 2.9 D C GS Continuous (T = 25C, V = 2.5V) 2.7 C GS A Pulsed 10 P Power Dissipation for Single Operation (Note 1a) 1.5 D W Power Dissipation for Single Operation (Note 1b) 0.65 T , T Operating and Storage Temperature 55 to +150 J STG q C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 83 (Single Operation) T JA Thermal Resistance, Junction-to-Ambient (Note 1b) 193 (Single Operation) R T JA q C/W R Thermal Resistance, Junction-to-Ambient (Note 1c) 68 (Dual Operation) T JA R Thermal Resistance, Junction-to-Ambient (Note 1d) 145 (Dual Operation) T JA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 002 FDMA2002NZ 7 8mm 3000 units 20 Fairchild Semiconductor Corporation FDMA2002NZ Rev B5 (W)