MOSFET N-Channel, POWERTRENCH , Ultra Thin, 1.5 V 20 V, 9.5 A, 23 m FDMA410NZT www.onsemi.com Description This Single N Channel MOSFET has been designed using V R MAX I DS DS(on) D MAX ON Semiconductors advanced Power Trench process to optimize the TM 20 V 9.5 A 23 m 4.5 V R V = 1.5 V on special MicroFET leadframe. DS(on) GS This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm max 2 x 2 MLP package technology. Ultra Thin NChannel Features Bottom Drain Contact 0.55 mm max package height MicroFET 2 x 2 mm Package D 1 6 D Max R = 23 m at V = 4.5 V, I = 9.5 A DS(on) GS D Max R = 29 m at V = 2.5 V, I = 8.0 A DS(on) GS D D 2 5 D Max R = 36 m at V = 1.8 V, I = 4.0 A DS(on) GS D Max R = 60 m at V = 1.5 V, I = 2.0 A DS(on) GS D 3 4 G S HBM ESD protection level > 1.5 kV (Note 3) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Lilon Battery Pack Baseband Switch Load Switch DCDC Conversion Mobile Device Switching UDFN6 2.05x2,05 0.65P (MicroFET) CASE 517DT MARKING DIAGRAM &Z&2&K 410T &Z = Assembly Plant Code &2 = Numeric Date Code &K = Lot Code 410T = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: December 2020 Rev. 2 FDMA410NZT/DFDMA410NZT MAXIMUM RATINGS (T = 25C, Unless otherwise specified) A Symbol Parameter Ratings Unit V V Drain to Source Voltage 20 DS V V Gate to Source Voltage 8 GS A I 9.5 Continuous, T = 25C (Note 1a) D A Pulsed (Note 4) 63 W P Power Dissipation, T = 25C (Note 1a) 2.4 D A Power Dissipation, T = 25C (Note 1b) 0.9 A C T , T 55 to +150 Operating and Storage Junction Temperature Range J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit C/W R Thermal Resistance, Junction to Ambient (Note 1a) 52 JA R Thermal Resistance, Junction to Ambient (Note 1b) 145 JA PACKAGE MARKING AND ORDERING INFORMATION Device Pin 1 Marking Device Package Reel Size Tape Width Shipping (Qty / Packing) Orientation 410T FDMA410NZT MicroFET 2x2 7 8 mm 3000 / Tape & Reel Top left 410T FDMA410NZTF130 MicroFET 2x2 7 8 mm 3000 / Tape & Reel Top right For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 20 V DSS D GS Breakdown Voltage 15 mV/C I = 250 A, referenced to 25C BV D DSS Temperature Coefficient T J I Zero Gate Voltage Drain Current V = 16 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 8 V, V = 0 V 10 A GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 0.4 0.8 1.0 V GS(th) GS DS D Gate to Source Threshold Voltage I = 250 A, referenced to 25C 3 mV/C V D GS(th) Temperature Coefficient T J R Static Drain to Source On Resistance V = 4.5 V, I = 9.5 A 14 23 m DS(on) GS D V = 2.5 V, I = 8.0 A 18 29 GS D V = 1.8 V, I = 4.0 A 25 36 GS D V = 1.5 V, I = 2.0 A 35 60 GS D V = 4.5 V, I = 9.5 A, T = 125C 21 32 GS D J g Forward Transconductance V = 5 V, I = 9.5 A 36 S FS DD D www.onsemi.com 2