MOSFET Single, P-Channel, POWERTRENCH -30 V, -11 A, 13.5 m FDMA6676PZ Description www.onsemi.com This device is an ultra low resistance PChannel FET. It is designed for power line load switching applications and reverse polarity protection. It is especially optimized for voltage rails that can climb as Pin 1 D high as 25 V. Typical end systems include laptop computers, tablets D G and mobile phone. Applications include battery protection, input Source Drain power line protection and charge path protection, including USB and other charge paths. The FDMA6676PZ has an enhanced V GS D D rating of 25 V specifically designed to simplify installation. When S used as reverse polarity protection, with gate tied to ground and drain WDFN6 tied to V input, it is designed to support operating input voltages that CASE 483AV can raise as high as 25 V without the need for external Zener protection on the gate. Its small 2 x 2 x 0.8 form factor make it an ideal part for mobile and space constrained applications. MARKING DIAGRAM Features &2&K Max r = 13.5 m V = 10 V DS(on) GS &Z676 25 V V Extended Operating Rating GS &. 30 V V Blocking DS 2 x 2 mm Form Factor &2 = 2Digit Date Code Low Profile 0.8 mm Maximum &K = Lot Code Integrated Protection Diode &Z = Assembly Plant Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS 676 = Specific Device Code &. = Pin 1 Dot Compliant PIN CONNECTION D D D D G S ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: April, 2021 Rev. 3 FDMA6676PZ/DFDMA6676PZ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Ratings Unit V Drain to Source Voltage 30 V DS V Gate to Source Voltage 25 V GS I A Drain Current Continuous, T = 25C (Note 1a) 11 D A Pulsed (Note 3) 165 P Power Dissipation T = 25C (Note 1a) 2.4 W D A Power Dissipation T = 25C (Note 1b) 0.9 A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Characteristic Value Unit R Thermal Resistance, Junction to Ambient (Note 1a) 52 C/W JA R Thermal Resistance, Junction to Ambient (Note 1b) 145 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min. Typ. Max. Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 30 V DSS D GS BV / T Breakdown Voltage Temperature I = 250 A, 19 mV/C DSS J D Coefficient Referenced to 25C I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 25 V, V = 0 V 10 A GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 1.2 2 2.6 V GS(th) GS DS D V / T Gate to Source Threshold Voltage I = 250 A, 5.9 mV/C GS(th) J D Temperature Coefficient Referenced to 25C r Static Drain to Source On Resistance V = 10 V, I = 11 A 11 13.5 m DS(on) GS D V = 4.5 V, I = 8 A 19 27 GS D V = 10 V, I = 11 A, T = 125C 14.5 21 GS D J g Forward Transconductance V = 5 V, I = 11 A 38 S FS DD D DYNAMIC CHARACTERISTICS V = 15 V, V = 0 V, f = 1 MHz C Input Capacitance 1440 2160 pF iss DS GS C Output Capacitance 477 720 pF oss C Reverse Transfer Capacitance 458 690 pF rss R Gate Resistance 12 g SWITCHING CHARACTERISTICS t TurnOn Delay Time V = 15 V, I = 11 A, 8.8 18 ns d(on) DD D V = 10 V, R = 6 GS GEN t Rise Time 19 34 ns r t TurnOff Delay Time 87 139 ns d(off) t 72 115 ns Fall Time f Q Total Gate Charge V = 0 V to 10 V, 33 46 nC g GS V = 15 V, I = 11 A DD D www.onsemi.com 2