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FDMC7208S Dual N-Channel PowerTrench MOSFET July 2013 FDMC7208S Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 9.0 m Q2: 30 V, 16 A, 6.4 m Features General Description Q1: N-Channel This device includes two 30V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is en- Max r = 9.0 m at V = 10 V, I = 12 A DS(on) GS D hanced for exceptional thermal performance. Max r = 11.0 m at V = 4.5 V, I = 11 A DS(on) GS D Applications Q2: N-Channel Computing Max r = 6.4 m at V = 10 V, I = 16 A DS(on) GS D Communications Max r = 7.5 m at V = 4.5 V, I = 13.5 A DS(on) GS D General Purpose Point of Load Termination is Lead-free and RoHS Compliant Notebook System Pin 1 G1 S1 S1 S1 D1 D2 S2 S2 G2 S2 Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage (Note 4) 20 12 V GS Drain Current -Continuous (Package limited) T = 25 C 22 26 C 1a 1b I -Continuous T = 25 C 12 16 A D A -Pulsed 60 80 E Single Pulse Avalanche Energy (Note 3) 21 21 mJ AS 1a 1b Power Dissipation for Single Operation T = 25 C 1.9 1.9 A P W D 1c 1d Power Dissipation for Single Operation T = 25 C 0.8 0.8 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction to Ambient 65 65 JA C/W 1c 1d R Thermal Resistance, Junction to Ambient 155 155 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7208S FDMC7208S Power 33 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC7208S Rev.C3