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FDMC7582 N-Channel PowerTrench MOSFET April 2012 FDMC7582 N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 m Features General Description Max r = 5.0 m at V = 10 V, I = 16.7 A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency and to minimize switch node Max r = 7.5 m at V = 4.5 V, I = 13.6 A DS(on) GS D ringing of DC/DC converters using either synchronous or State-of-the-art switching performance conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body Lower output capacitance, gate resistance, and gate charge diode reverse recovery performance.. boost efficiency Application Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction High side switching for high end computing Clip bonding technology further reduces On resistance and High power density DC-DC synchronous buck source inductance Low loss load switch RoHS Compliant Communication & telecon Point of Load Bottom Top Pin 1 S S D S S G S D S D D D D G D D Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage (Note 3) 20 V GS Drain Current - Continuous (Package limited) Tc=25C 49 - Continuous (Silicon Limited) Tc=25C 76 I A D - Continuous T = 25 C (Note 1a) 16.7 A - Pulsed 60 E Single Pulse Avalanche Energy (Note 4) 38 mJ AS Power Dissipation T = 25 C 52 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.4 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7582 FDMC7582 Power 33 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMC7582 Rev.C6