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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMC8200S Dual N-Channel PowerTrench MOSFET March 2011 FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 m, 20 m Features General Description This device includes two specialized N-Channel MOSFETs in a Q1: N-Channel due power33(3mm X 3mm MLP) package. The switch node has Max r = 20 m at V = 10 V, I = 6 A DS(on) GS D been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and Max r = 32 m at V = 4.5 V, I = 5 A DS(on) GS D synchronous MOSFET (Q2) have been designed to provide optimal power efficiency. Q2: N-Channel Max r = 10 m at V = 10 V, I = 8.5 A DS(on) GS D Applications Max r = 13.5 m at V = 4.5 V, I = 7.2 A DS(on) GS D Mobile Computing RoHS Compliant Mobile Internet Devices General Purpose Point of Load Bottom Bottom V IN D1 V Q 2 IN D1 5 4 Pin 1 V D1 IN G HS G1 V IN D1 6 3 7 2 GND S2 GND S2 GND 8 1 S2 Q 1 G LS G2 Power33 MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage (Note 4) 20 20 V GS Drain Current -Continuous (Package limited) T = 25 C 18 13 C -Continuous (Silicon limited) T = 25 C 23 46 C I A D 1a 1b -Continuous T = 25 C 6 8.5 A -Pulsed 40 27 E Single Pulse Avalanche Energy (Note 3) 12 32 AS 1a 1b Power Dissipation for Single Operation T = 25C 1.9 2.5 A P W D 1c 1d Power Dissipation for Single Operation T = 25C 0.7 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction to Ambient 65 50 JA 1c 1d R Thermal Resistance, Junction to Ambient 180 125 C/W JA R Thermal Resistance, Junction to Case 7.5 4.2 JC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8200S FDMC8200S Power 33 13 12 mm 3000 units 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC8200S Rev.C4 D2/S1 SWITCH NODE