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FDMC8588 N-Channel PowerTrench MOSFET November 2014 FDMC8588 N-Channel PowerTrench MOSFET 25 V, 40 A, 5.7 m Features General Description Max r = 5.7 m at V = 4.5 V, I = 16.5 A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency and to minimize switch node State-of-the-art switching performance ringing of DC/DC converters using either synchronous or Lower output capacitance, gate resistance, and gate charge conventional switching PWM controllers. It has been optimized boost efficiency for low gate charge, low r , fast switching speed and body DS(on) diode reverse recovery performance. Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction Applications RoHS Compliant High side switching for high end computing High power density DC-DC synchronous buck converter Bottom Top Pin 1 S S D S S S G D S D D D D G D D Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage (Note 5) 25 V DS V Gate to Source Voltage (Note 4) 12 V GS Drain Current - Continuous (Package limited) T = 25 C 40 C - Continuous (Silicon Limited) T = 25 C 59 C I A D - Continuous (Note 1a) 16.5 - Pulsed 60 E Single Pulse Avalanche Energy (Note 3) 29 mJ AS Power Dissipation T = 25 C 26 C P W D Power Dissipation T = 25 C (Note 1a) 2.4 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case T = 25 C 4.7 JC C C/W R Thermal Resistance, Junction to Ambient T = 25 C (Note 1a) 53 JA A Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity Power 33 08OD FDMC8588 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMC8588 Rev.D4