X-On Electronics has gained recognition as a prominent supplier of FDMC86520L MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDMC86520L MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDMC86520L ON Semiconductor

FDMC86520L electronic component of ON Semiconductor
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Part No.FDMC86520L
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 60V N-Chnl Pwr Trench MOSFET
Datasheet: FDMC86520L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.2142 ea
Line Total: USD 5.21 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 1.1674

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 1.3303

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 1.2587

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 324
Multiples : 324
324 : USD 1.2588

0
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 3.2529
10 : USD 3.1776
30 : USD 3.1256
100 : USD 3.0761

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 5.2142
10 : USD 1.8851
25 : USD 1.7849
100 : USD 1.5141
500 : USD 1.2434
1000 : USD 1.0329
3000 : USD 1.0007

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 2.654
5 : USD 2.3912
9 : USD 1.7474
24 : USD 1.6423

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 6
Multiples : 1
6 : USD 2.5446

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 6
Multiples : 1
6 : USD 1.4184

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
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We are delighted to provide the FDMC86520L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDMC86520L and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDMC86520L N-Channel PowerTrench MOSFET FDMC86520L N-Channel Power Trench MOSFET 60 V, 22 A, 7.9 m General Description Features This N-Channel MOSFET has been designed specifically to Max r = 7.9 m at V = 10 V, I = 13.5 A improve the overall efficiency and to minimize switch node DS(on) GS D ringing of DC/DC converters using either synchronous or Max r = 11.7 m at V = 4.5 V, I = 11.5 A DS(on) GS D conventional switching PWM controllers.It has been optimized Low Profile - 1 mm max in Power 33 for low gate charge, low r , fast switching speed and body DS(on) diode reverse recovery performance. 100% UIL Tested Applications RoHS Compliant Primary Switch in isolated DC-DC Synchronous Rectifier Load Switch Bottom Top Pin 1 D 5 4 G G S S D 6 3 S S S D 7 2 D D D 8 1 S D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 22 C I -Continuous T = 25 C (Note 1a) 13.5 A D A -Pulsed 60 E Single Pulse Avalanche Energy (Note 3) 79 mJ AS Power Dissipation T = 25 C 40 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.1 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86520L FDMC86520L Power 33 13 12 mm 3000 units 2011 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev .3 FDMC86520L/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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