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Advancements in both silicon and Max r = 2.0 m at V = 4.5 V, I = 25 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This DS(on) Advanced Package and Silicon combination for low r DS(on) device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. SyncFET Schottky Body Diode Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL tested Notebook Vcore/ GPU low side switch RoHS Compliant Networking Point of Load low side switch Bottom Top Pin 1 D G 5 4 S S S D G 6 3 S D S 7 2 D S D 8 1 D D D MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous (Package limited) T = 25 C 49 C -Continuous (Silicon limited) T = 25 C 194 C I A D -Continuous T = 25 C (Note 1a) 31 A -Pulsed 180 E Single Pulse Avalanche Energy (Note 3) 242 mJ AS Power Dissipation T = 25 C 96 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.3 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS0300S FDMS0300S Power 56 13 12 mm 3000 units 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMS0300S Rev.C1