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TM FDMS0302S N-Channel PowerTrench SyncFET March 2015 FDMS0302S TM N-Channel PowerTrench SyncFET 30 V, 49 A, 1.9 m Features General Description The FDMS0302S has been designed to minimize losses in Max r = 1.9 m at V = 10 V, I = 28 A DS(on) GS D power conversion application. Advancements in both silicon and Max r = 2.4 m at V = 4.5 V, I = 23 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This Advanced Package and Silicon Combination for Low r DS(on) DS(on) device has the added benefit of an efficient monolithic Schottky and High Efficiency body diode. SyncFET Schottky Body Diode Applications MSL1 Robust Package Design 100% UIL Tested Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU Low Side Switch Networking Point of Load Low Side Switch Bottom Top Pin 1 D G 5 4 S S S D G 6 3 S D 7 2 S D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous (Package limited) T = 25 C 49 C -Continuous (Silicon limited) T = 25 C 177 C I A D -Continuous T = 25 C (Note 1a) 29 A -Pulsed 150 E Single Pulse Avalanche Energy (Note 3) 162 mJ AS Power Dissipation T = 25 C 89 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.4 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS0302S FDMS0302S Power 56 13 12 mm 3000 units 1 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMS0302S Rev.1.4