FDMS3660S PowerTrench Power Stage Asymmetric Dual NChannel MOSFET Description This device includes two specialized NChannel MOSFETs in a www.onsemi.com dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. Features Q1: NChannel Max r = 8 m at V = 10 V, I = 13 A DS(on) GS D Max r = 11 m at V = 4.5 V, I = 11 A DS(on) GS D Q2: NChannel G1 Max r = 1.8 m at V = 10 V, I = 30 A DS(on) GS D Pin 1 D1 Max r = 2.2 m at V = 4.5 V, I = 27 A D1 DS(on) GS D D1 Low Inductance Packaging Shortens Rise/Fall Times, Resulting in D1 Lower Switching Losses PHASE (S1/D2) MOSFET Integration Enables Optimum Layout for Lower Circuit G2 Inductance and Reduced Switch Node Ringing S2 These Devices are PbFree and are RoHS Compliant S2 S2 Applications PQFN8 POWER 56 Computing CASE 483AJ Communications General Purpose Point of Load Notebook VCORE Q2 S2 D1 5 4 PHASE D1 S2 6 3 S2 D1 7 2 G2 G1 8 1 Q1 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: November, 2017 Rev. 3 FDMS3660S/DFDMS3660S MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Rating Q1 Q2 Unit V Drain to Source Voltage 30 30 V DS Bvdsst Bvdsst (Transient) < 100 ns 36 36 V V Gate to Source Voltage (Note 3) 20 12 V GS I Drain Current Continuous (Package limited) (T = 25C) 30 60 A D C Drain Current Continuous (Silicon limited) (T = 25C) 60 145 C Drain Current Continuous (T = 25C) 13 (Note 6a) 30 (Note 6b) A Drain Current Pulsed 40 120 E Single Pulse Avalanche Energy 33 (Note 4) 86 (Note 5) mJ AS P Power Dissipation for Single Operation (T = 25C) 2.2 (Note 6a) 2.5 (Note 6b) W D A Power Dissipation for Single Operation (T = 25C) 1 (Note 6c) 1 (Note 6d) A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Q1 Q2 Unit R Thermal Resistance, JunctiontoAmbient 57 (Note 6a) 50 (Note 6b) C/W JA R Thermal Resistance, JunctiontoAmbient 125 (Note 6c) 120 (Note 6d) C/W JA R Thermal Resistance, JunctiontoCase 2.9 2.2 C/W JC PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Quantity FDMS3660S 22CF Power 56 13 12 mm 3000 Units 07OD Table 1. ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted J Symbol Parameter Test Conditions Type Min Typ Max Units OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage Q1 30 V I = 250 A, V = 0 V DSS D GS I = 1 mA, V = 0 V Q2 30 D GS BV / Breakdown Voltage Temperature I = 250 A, referenced to 25C Q1 16 mV/C DSS D T Coefficient I = 10 mA, referenced to 25C Q2 24 J D I Zero Gate Voltage Drain Current V = 24 V, V = 0 V Q1 1 A DSS DS GS Q2 500 A I Gate to Source Leakage Current V = 20 V, V = 0 V Q1 100 nA GSS GS DS V = 12 V, V = 0 V Q2 100 nA GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A Q1 1.1 1.9 2.7 V GS(th) GS DS D Q2 1.1 1.5 2.2 V = V , I = 1 mA GS DS D V / Gate to Source Threshold Voltage I = 250 A, referenced to 25C Q1 6 mV/C GS(th) D Temperature Coefficient I = 10 mA, referenced to 25C Q2 3 T J D r Drain to Source On Resistance V = 10 V, I = 13 A Q1 4 8 m DS(on) GS D V = 4.5 V, I = 11 A 6 11 GS D V = 10 V, I = 13 A, T =125C 5.7 8.7 GS D J V = 10 V, I = 30 A Q2 1.3 1.8 GS D V = 4.5 V, I = 27 A 1.5 2.2 GS D V = 10 V, I = 30 A, T = 125C 1.86 2.6 GS D J www.onsemi.com 2