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TM FDMS0312S N-Channel PowerTrench SyncFET October 2014 FDMS0312S TM N-Channel PowerTrench SyncFET 30 V, 42 A, 4.9 m : Features General Description The FDMS0312S has been designed to minimize losses in Max r = 4.9 m : at V = 10 V, I = 18 A DS(on) GS D power conversion application. Advancements in both silicon and Max r = 5.8 m : at V = 4.5 V, I = 14 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This Advanced Package and Silicon combination for low r DS(on) DS(on) device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. SyncFET Schottky Body Diode Applications MSL1 robust package design 100% UIL tested Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Desktop Bottom Top Pin 1 D G S 5 4 S S D G S 6 3 D S 7 2 D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous (Package limited) T = 25 C 42 C -Continuous (Silicon limited) T = 25 C 83 C I A D -Continuous T = 25 C (Note 1a) 19 A -Pulsed 90 E Single Pulse Avalanche Energy (Note 3) 60 mJ AS Power Dissipation T = 25 C 46 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.7 T JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 T JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS0312S FDMS0312S Power 56 3 12 mm 3000 units 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS0312S Rev.D1