TM TM FDMS2506SDC N-Channel Dual Cool PowerTrench SyncFET July 2013 FDMS2506SDC TM TM N-Channel Dual Cool PowerTrench SyncFET 25 V, 49 A, 1.45 m Features General Description TM Dual Cool Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process. Max r = 1.45 m at V = 10 V, I = 30 A TM DS(on) GS D Advancements in both silicon and Dual Cool package Max r = 2.1 m at V = 4.5 V, I = 26 A technologies have been combined to offer the lowest r DS(on) GS D DS(on) while maintaining excellent switching performance by extremely High performance technology for extremely low r DS(on) low Junction-to-Ambient thermal resistance. This device has the SyncFET Schottky Body Diode added benefit of an efficient monolithic Schottky body diode. RoHS Compliant Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side Pin 1 S S D G 5 4 S G D 6 3 S D 7 2 S D D D S D 8 1 D Top Power 56 Bottom MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous (Package limited) T = 25 C 49 C -Continuous (Silicon limited) T = 25 C 202 C I A D -Continuous T = 25 C (Note 1a) 39 A -Pulsed 200 E Single Pulse Avalanche Energy (Note 3) 220 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 5) 1.6 V/ns Power Dissipation T = 25 C 89 C P W D Power Dissipation T = 25 C (Note 1a) 3.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Top Source) 2.7 JC R Thermal Resistance, Junction to Case (Bottom Drain) 1.4 JC R Thermal Resistance, Junction to Ambient (Note 1a) 38 JA R Thermal Resistance, Junction to Ambient (Note 1b) 81 C/W JA R Thermal Resistance, Junction to Ambient (Note 1i) 16 JA R Thermal Resistance, Junction to Ambient (Note 1j) 23 JA R Thermal Resistance, Junction to Ambient (Note 1k) 11 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity TM 2506S FDMS2506SDC Dual Cool Power 56 13 12 mm 3000 units 1 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMS2506SDC Rev.C1 TM TM FDMS2506SDC N-Channel Dual Cool PowerTrench SyncFET Electrical Characteristics T = 25 C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV Drain to Source Breakdown Voltage I = 1 mA, V = 0 V 25 V DSS D GS BV Breakdown Voltage Temperature DSS I = 10 mA, referenced to 25 C 21 mV/C D T Coefficient J I Zero Gate Voltage Drain Current V = 20 V, V = 0 V 500 A DSS DS GS I Gate to Source Leakage Current, Forward V = 20 V, V = 0 V 100 nA GSS GS DS On Characteristics V Gate to Source Threshold Voltage V = V , I = 1 mA 1.2 1.7 3.0 V GS(th) GS DS D V Gate to Source Threshold Voltage GS(th) I = 10 mA, referenced to 25 C -5 mV/C D T Temperature Coefficient J V = 10 V, I = 30 A 1.2 1.45 GS D r Static Drain to Source On Resistance V = 4.5 V, I = 26 A 1.6 2.1 m DS(on) GS D V = 10 V, I = 30 A, T = 125 C 1.6 2.0 GS D J g Forward Transconductance V = 5 V, I = 30 A 171 S FS DS D Dynamic Characteristics C Input Capacitance 4470 5945 pF iss V = 13 V, V = 0 V, DS GS C Output Capacitance 1200 1560 pF oss f = 1 MHz C Reverse Transfer Capacitance 244 370 pF rss R Gate Resistance 0.8 1.8 g Switching Characteristics t Turn-On Delay Time 16 29 ns d(on) t Rise Time 7.4 15 ns V = 13 V, I = 30 A, r DD D V = 10 V, R = 6 t Turn-Off Delay Time 41 66 ns GS GEN d(off) t Fall Time 4.8 10 ns f Q Total Gate Charge V = 0 V to 10 V 66 93 nC g GS Q Total Gate Charge V = 0 V to 4.5 V 30 43 nC V = 13 V, g GS DD I = 30 A Q Gate to Source Gate Charge 13.4 nC D gs Q Gate to Drain Miller Charge 7.5 nC gd Drain-Source Diode Characteristics V = 0 V, I = 2 A (Note 2) 0.40 0.7 GS S V Source to Drain Diode Forward Voltage V SD V = 0 V, I = 30 A (Note 2) 0.76 1.2 GS S t Reverse Recovery Time 35 56 ns rr I = 30 A, di/dt = 300 A/s F Q Reverse Recovery Charge 39 63 nC rr www.fairchildsemi.com 2010 Fairchild Semiconductor Corporation 2 FDMS2506SDC Rev.C1