FDMS3604S MOSFET N-Channel, POWERTRENCH , Power Stage, Asymetric Dual General Description www.onsemi.com This device includes two specialized NChannel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. G1 D1 D1 The control MOSFET (Q1) and synchronous SyncFET (Q2) have D1 been designed to provide optimal power efficiency. D1 PHASE (S1/D2) Features Q1: NChannel G2 S2 S2 Max r = 8 m at V = 10 V, I = 13 A S2 DS(on) GS D Max r = 11 m at V = 4.5 V, I = 11 A Top Bottom DS(on) GS D Q2: NChannel PQFN8 5x6, 1.27P Max r = 2.6 m at V = 10 V, I = 23 A CASE 483AJ DS(on) GS D Max r = 3.5 m at V = 4.5 V, I = 21 A DS(on) GS D Low Inductance Packaging Shortens Rise/Fall Times, Resulting in MARKING DIAGRAM Lower Switching Losses MOSFET Integration Enables Optimum Layout for Lower Circuit Y&Z&3&K Inductance and Reduced Switch Node Ringing 22CA This Device is PbFree and is RoHS Compliant N7CC Applications Computing Y = ON Semiconductor Logo Communications &Z = Assembly Plant Code General Purpose Point of Load &3 = Numeric Date Code &K = Lot Code Notebook VCORE 22CA N7CC = Specific Device Code PIN CONFIGURATION Q2 S2 5 4 D1 PHASE S2 6 3 D1 S2 7 2 D1 G2 8 1 G1 Q1 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: January, 2020 Rev. 3 FDMS3604S/DFDMS3604S MOSFET MAXIMUM RATINGS T = 25C Unless Otherwise Noted A Symbol Parameter Q1 Q2 Units VDS Drain to Source Voltage 30 30 V VDSt Drain to Source Transient Voltage ( t < 100 ns) 33 33 V Transient VGS Gate to Source Voltage (Note 3) 20 20 V I A Drain Current D Continuous (Package limited) T = 25 C 30 40 C Continuous (Silicon limited) T = 25 C 60 130 C Continuous T = 25 C 13 (Note 1a) 23 (Note 1b) A 40 100 Pulsed EAS Single Pulse Avalanche Energy 40 (Note 4) 60 (Note 5) mJ 2.2 (Note 1a) 2.5 (Note 1b) Power Dissipation for Single Operation T = 25 C A P W D Power Dissipation for Single Operation T = 25 C 1.0 (Note 1c) 1.0 (Note 1d) A TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 C THERMAL CHARACTERISTICS Symbol Parameter Q1 Q2 Unit C/W 57 (Note 1a) 50 (Note 1b) RJA Thermal Resistance, Junction to Ambient RJA Thermal Resistance, Junction to Ambient 125 (Note 1c) 120 (Note 1d) RJC Thermal Resistance, Junction to Case 3.5 2 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity 22CA N7CC FDMS3604S Power 56 13 12 mm 3000 Units www.onsemi.com 2