ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDMS3606AS PowerTrench Power Stage FDMS3606AS PowerTrench Power Stage General Description 30 V Asymmetric Dual N-Channel MOSFET This device includes two specialized N-Channel MOSFETs in a Features dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous Q1: N-Channel buck converters. The control MOSFET (Q1) and synchronous Max r = 8 m at V = 10 V, I = 13 A DS(on) GS D SyncFET (Q2) have been designed to provide optimal power Max r = 11 m at V = 4.5 V, I = 11 A DS(on) GS D efficiency. Q2: N-Channel Applications Max r = 1.9 m at V = 10 V, I = 27 A DS(on) GS D Max r = 2.8 m at V = 4.5 V, I = 23 A Computing DS(on) GS D Low inductance packaging shortens rise/fall times, resulting in Communications lower switching losses General Purpose Point of Load MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing Notebook VCORE RoHS Compliant Sever G1 D1 D1 D1 Q 2 D1 S2 D1 5 4 PHASE PHASE S2 6 3 D1 (S1/D2) D1 S2 7 2 G2 S2 G2 G1 S2 8 1 Q 1 S2 Top Bottom Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage (Note 3) 20 20 V GS Drain Current -Continuous (Package limited) T = 25 C 30 40 C -Continuous (Silicon limited) T = 25 C 60 148 C I A D 1a 1b -Continuous T = 25 C 13 27 A -Pulsed 40 100 4 5 E Single Pulse Avalanche Energy 40 162 mJ AS 1a 1b Power Dissipation for Single Operation T = 25 C 2.2 2.5 A P W D 1c 1d Power Dissipation for Single Operation T = 25 C 1.0 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction to Ambient 57 50 JA 1c 1d R Thermal Resistance, Junction to Ambient 125 120 C/W JA R Thermal Resistance, Junction to Case 3.5 2 JC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 22CA FDMS3606AS Power 56 13 12 mm 3000 units N9CC 2011 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 3 FDMS3606AS/D