X-On Electronics has gained recognition as a prominent supplier of FDMS7606 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDMS7606 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDMS7606 ON Semiconductor

FDMS7606 electronic component of ON Semiconductor
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Part No.FDMS7606
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Dual N-Channel PowerTrench MOSFET
Datasheet: FDMS7606 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
369: USD 1.1416 ea
Line Total: USD 421.25 
Availability - 0
MOQ: 369  Multiples: 369
Pack Size: 369
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 369
Multiples : 369
369 : USD 1.1416

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.9745
10 : USD 2.1168
25 : USD 2.016
100 : USD 1.7388
250 : USD 1.449
500 : USD 1.2479
1000 : USD 1.1752
3000 : USD 1.071

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDMS7606 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDMS7606 and other electronic components in the MOSFETs category and beyond.

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FDMS7606 Dual N-Channel PowerTrench MOSFET May 2011 FDMS7606 Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 m Q2: 30 V, 22 A, 11.6 m Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max r = 11.4 m at V = 10 V, I = 11.5 A dual MLP package. The switch node has been internally DS(on) GS D connected to enable easy placement and routing of synchronous Max r = 15.7 m at V = 4.5 V, I = 10 A DS(on) GS D buck converters. The control MOSFET (Q1) and synchronous Q2: N-Channel MOSFET (Q2) have been designed to provide optimal power Max r = 11.6 m at V = 10 V, I = 12 A DS(on) GS D efficiency. Max r = 17.2 m at V = 4.5 V, I = 9.5 A DS(on) GS D Applications RoHS Compliant Computing Communications General Purpose Point of Load Notebook Charger S2 S2 S2 Q2 G2 D1 S2 5 4 S1/D2 S2 D1 D1 6 3 D1 D1 S2 D1 7 2 D1 G1 Q1 Pin1 Top Bottom G2 8 G1 1 Power 56 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage (Note 3) 20 20 V GS Drain Current -Continuous (Package limited) T = 25 C 12 22 C -Continuous (Silicon limited) T = 25 C 41 39 C I A D 1a 1b -Continuous T = 25 C 11.5 12 A -Pulsed 50 60 E Single Pulse Avalanche Energy (Note 4) 25 33 mJ AS 1a 1b Power Dissipation for Single Operation T = 25C 2.2 2.5 A P W D 1c 1d Power Dissipation for Single Operation T = 25C 1.0 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction to Ambient 57 50 JA 1c 1d R Thermal Resistance, Junction to Ambient 125 120 C/W JA R Thermal Resistance, Junction to Case 4.6 4.7 JC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7606 FDMS7606 Power 56 13 12 mm 3000 units 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS7606 Rev.C FDMS7606 Dual N-Channel PowerTrench MOSFET Electrical Characteristics T = 25C unless otherwise noted J Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics Q1 30 BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V V DSS D GS Q2 30 BV Breakdown Voltage Temperature Q1 16 DSS I = 250 A, referenced to 25C mV/C D T Coefficient Q2 20 J Q1 1 I Zero Gate Voltage Drain Current V = 24 V, V = 0 V A DSS DS GS Q2 1 V = 20 V, V = 0 V Q1 100 GS DS I Gate to Source Leakage Curent nA GSS V = 20 V, V = 0 V Q2 100 GS DS On Characteristics Q1 1.0 2.1 3.0 V Gate to Source Threshold Voltage V = V , I = 250 A V GS(th) GS DS D Q2 1.0 1.9 3.0 V Gate to Source Threshold Voltage Q1 -6 GS(th) I = 250 A, referenced to 25C mV/C D T Temperature Coefficient Q2 -5.5 J V = 10 V, I = 11.5 A 9.2 11.4 GS D V = 4.5 V, I = 10 A Q1 12.6 15.7 GS D V = 10 V, I = 11.5 A, T = 125C 11.8 14.7 GS D J r Static Drain to Source On Resistance m DS(on) V = 10 V, I = 12 A 9.7 11.6 GS D V = 4.5 V, I= 9.5 A Q2 12.8 17.2 GS V = 10 V, I = 12 A, T = 125C 12.3 15.4 GS D J V = 5 V, I = 11.5 A Q1 53 DD D g Forward Transconductance S FS V = 5 V, I = 12 A Q2 47 DD D Dynamic Characteristics Q1 1050 1400 Q1: C Input Capacitance pF iss Q2 947 1260 V = 15 V, V = 0 V, f = 1 MHZ DS GS Q1 295 395 C Output Capacitance pF oss Q2: Q2 191 255 V = 15 V, V = 0 V, f = 1 MHZ DS GS Q1 32 50 C Reverse Transfer Capacitance pF rss Q2 131 200 Q1 0.2 1.6 4.0 R Gate Resistance g Q2 0.2 1.0 2.5 Switching Characteristics Q1 7 14 t Turn-On Delay Time ns d(on) Q1 Q2 6 12 V = 15 V, I = 11.5 A, R = 6 DD D GEN Q1 3 10 t Rise Time ns r Q2 3 10 Q1 18 33 Q2 t Turn-Off Delay Time ns d(off) Q2 19 34 V = 15 V, I = 12 A, R = 6 DD D GEN Q1 3 10 t Fall Time ns f Q2 3 10 Q1 16 22 Q Total Gate Charge V = 0V to 10 V nC Q1 g(TOT) GS Q2 19 27 V = 15 V, DD Q1 8 11 I = 11.5 A Q Total Gate Charge V = 0V to 5 V nC D g(TOT) GS Q2 10 15 Q1 3.2 Q Gate to Source Charge nC Q2 gs Q2 2.6 V = 15 V, DD Q1 2.0 I = 12 A Q Gate to Drain Miller Charge nC D gd Q2 4.2 2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDMS7606 Rev.C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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