FDMS7606 Dual N-Channel PowerTrench MOSFET May 2011 FDMS7606 Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 m Q2: 30 V, 22 A, 11.6 m Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max r = 11.4 m at V = 10 V, I = 11.5 A dual MLP package. The switch node has been internally DS(on) GS D connected to enable easy placement and routing of synchronous Max r = 15.7 m at V = 4.5 V, I = 10 A DS(on) GS D buck converters. The control MOSFET (Q1) and synchronous Q2: N-Channel MOSFET (Q2) have been designed to provide optimal power Max r = 11.6 m at V = 10 V, I = 12 A DS(on) GS D efficiency. Max r = 17.2 m at V = 4.5 V, I = 9.5 A DS(on) GS D Applications RoHS Compliant Computing Communications General Purpose Point of Load Notebook Charger S2 S2 S2 Q2 G2 D1 S2 5 4 S1/D2 S2 D1 D1 6 3 D1 D1 S2 D1 7 2 D1 G1 Q1 Pin1 Top Bottom G2 8 G1 1 Power 56 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage (Note 3) 20 20 V GS Drain Current -Continuous (Package limited) T = 25 C 12 22 C -Continuous (Silicon limited) T = 25 C 41 39 C I A D 1a 1b -Continuous T = 25 C 11.5 12 A -Pulsed 50 60 E Single Pulse Avalanche Energy (Note 4) 25 33 mJ AS 1a 1b Power Dissipation for Single Operation T = 25C 2.2 2.5 A P W D 1c 1d Power Dissipation for Single Operation T = 25C 1.0 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction to Ambient 57 50 JA 1c 1d R Thermal Resistance, Junction to Ambient 125 120 C/W JA R Thermal Resistance, Junction to Case 4.6 4.7 JC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7606 FDMS7606 Power 56 13 12 mm 3000 units 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS7606 Rev.C FDMS7606 Dual N-Channel PowerTrench MOSFET Electrical Characteristics T = 25C unless otherwise noted J Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics Q1 30 BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V V DSS D GS Q2 30 BV Breakdown Voltage Temperature Q1 16 DSS I = 250 A, referenced to 25C mV/C D T Coefficient Q2 20 J Q1 1 I Zero Gate Voltage Drain Current V = 24 V, V = 0 V A DSS DS GS Q2 1 V = 20 V, V = 0 V Q1 100 GS DS I Gate to Source Leakage Curent nA GSS V = 20 V, V = 0 V Q2 100 GS DS On Characteristics Q1 1.0 2.1 3.0 V Gate to Source Threshold Voltage V = V , I = 250 A V GS(th) GS DS D Q2 1.0 1.9 3.0 V Gate to Source Threshold Voltage Q1 -6 GS(th) I = 250 A, referenced to 25C mV/C D T Temperature Coefficient Q2 -5.5 J V = 10 V, I = 11.5 A 9.2 11.4 GS D V = 4.5 V, I = 10 A Q1 12.6 15.7 GS D V = 10 V, I = 11.5 A, T = 125C 11.8 14.7 GS D J r Static Drain to Source On Resistance m DS(on) V = 10 V, I = 12 A 9.7 11.6 GS D V = 4.5 V, I= 9.5 A Q2 12.8 17.2 GS V = 10 V, I = 12 A, T = 125C 12.3 15.4 GS D J V = 5 V, I = 11.5 A Q1 53 DD D g Forward Transconductance S FS V = 5 V, I = 12 A Q2 47 DD D Dynamic Characteristics Q1 1050 1400 Q1: C Input Capacitance pF iss Q2 947 1260 V = 15 V, V = 0 V, f = 1 MHZ DS GS Q1 295 395 C Output Capacitance pF oss Q2: Q2 191 255 V = 15 V, V = 0 V, f = 1 MHZ DS GS Q1 32 50 C Reverse Transfer Capacitance pF rss Q2 131 200 Q1 0.2 1.6 4.0 R Gate Resistance g Q2 0.2 1.0 2.5 Switching Characteristics Q1 7 14 t Turn-On Delay Time ns d(on) Q1 Q2 6 12 V = 15 V, I = 11.5 A, R = 6 DD D GEN Q1 3 10 t Rise Time ns r Q2 3 10 Q1 18 33 Q2 t Turn-Off Delay Time ns d(off) Q2 19 34 V = 15 V, I = 12 A, R = 6 DD D GEN Q1 3 10 t Fall Time ns f Q2 3 10 Q1 16 22 Q Total Gate Charge V = 0V to 10 V nC Q1 g(TOT) GS Q2 19 27 V = 15 V, DD Q1 8 11 I = 11.5 A Q Total Gate Charge V = 0V to 5 V nC D g(TOT) GS Q2 10 15 Q1 3.2 Q Gate to Source Charge nC Q2 gs Q2 2.6 V = 15 V, DD Q1 2.0 I = 12 A Q Gate to Drain Miller Charge nC D gd Q2 4.2 2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDMS7606 Rev.C