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FDMS7678 N-Channel Power Trench MOSFET March 2015 FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 m Features General Description Max r = 5.5 m at V = 10 V, I = 17.5 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advanced Power Trench process that has Max r = 6.8 m at V = 4.5 V, I = 15 A DS(on) GS D been especially tailored to minimize the on-state resistance. This High Performance Technology for Extremely Low r device is well suited for Power Management and load switching DS(on) applications common in Notebook Computers and Portable Termination is Lead-Free Battery Packs. RoHS Compliant Applications DC - DC Buck Converters Notebook Battery Power Management Load Switch in Notebook Bottom Top Pin 1 S S D S S Pin 1 G S D S D D G D D D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 3) 20 V GS Drain Current -Continuous (Package limited) T = 25 C 26 C Drain Current -Continuous (Silicon limited) T = 25 C 72 C I A D -Continuous T = 25 C (Note 1a) 17.5 A -Pulsed 70 E Single Pulse Avalanche Energy (Note 4) 54 mJ AS Power Dissipation T = 25 C 41 C P W D Power Dissipation T = 25 C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7678 FDMS7678 Power 56 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMS7678 Rev.1.4