ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDMS2D4N03S N-Channel PowerTrench MOSFET www.onsemi.com FDMS2D4N03S TM N-Channel PowerTrench SyncFET 30 V, 163 A, 1.8 m Features General Description The FDMS2D4N03S has been designed to minimize losses in Max r = 1.8 m at V = 10 V, I = 28 A DS(on) GS D power conversion application. Advancements in both silicon and Max r = 2.34 m at V = 4.5 V, I = 26 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This DS(on) High Performance Technology for Extremely Low r DS(on) device has the added benefit of an efficient monolithic schottky TM SyncFET Schottky Body Diode body diode. 100% UIL Tested Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU Low Side Switch Networking Point of Load Low Side Switch Telecom Secondary Side Rectification D D D D G D 5 4 D 6 3 S G D S S 7 2 S Pin 1 S S D 8 1 Top Bottom Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 16 V GS Drain Current -Continuous T = 25 C (Note 5) 163 C -Continuous T = 100 C (Note 5) 103 C I A D -Continuous T = 25 C (Note 1a) 28 A -Pulsed (Note 4) 694 E Single Pulse Avalanche Energy (Note 3) 175 mJ AS Power Dissipation T = 25 C 74 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.7 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS2D4N03S FDMS2D4N03S Power 56 13 12 mm 3000 units Semiconductor Components Industries, LLC, 2017 Publication Order Number: Jul, 2017, Rev. 1.1 FDMS2D4N03S 1