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FDMC013P030Z P-Channel PowerTrench MOSFET August 2016 FDMC013P030Z P-Channel PowerTrench MOSFET -30 V, -54 A, 7.0 m Features General Description This P-Channel MOSFET is produced using Fairchild Max r = 7.0 m at V = -10 V, I = -14 A DS(on) GS D Semiconductors advanced PowerTrench process that has been Max r = 12.0 m at V = -4.5 V, I = -10 A DS(on) GS D optimized for r switching performance and ruggedness. DS(on), High Performance Trench Technology for Extremely Low Applications r DS(on) High Power and Current Handling Capability in a Widely Used Battery Management Surface Mount Package Load Switch Termination is Lead-free and RoHS Compliant HBM ESD Capability Level > 4 kV Typical (Note 4) Bottom Top Pin 1 S D G S S S D S S D D D D G D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage 25 V GS Drain Current -Continuous T = 25 C (Note 5) -54 C Drain Current -Continuous T = 100 C (Note 5) -35 C I A D -Continuous T = 25 C (Note 1a) -14 A -Pulsed (Note 4) -309 E Single Pulse Avalanche Energy (Note 3) 54 mJ AS Power Dissipation T = 25 C 30 C P W D Power Dissipation T = 25 C (Note 1a) 2.4 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.2 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC013P030Z FDMC013P030Z MLP 3.3x3.3 13 12 mm 3000 units 2016 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMC013P030Z Rev.1.0