MOSFET - Power, Single P-Channel, POWERTRENCH 20 V, 11 A, 13 m FDMA008P20LZ General Description This device is designed specifically for battery charge or load www.onsemi.com switching in cellular handset and other ultraportable applications. It features a MOSFET with low onstate resistance and zener diode protection against ESD. Bottom Drain Contact The WDFN6 (MicroFET 2.052.05) package offers exceptional D 1 6 D thermal performance for its physical size and is well suited to linear mode applications. D 2 5 D Features 3 4 G S Max r = 13 m at V = 4.5 V, I = 2.5 A DS(on) GS D Max r = 16 m at V = 2.5 V, I = 1.4 A DS(on) GS D Max r = 20 m at V = 1.8 V, I = 1.0 A DS(on) GS D Max r = 30 m at V = 1.5 V, I = 0.85 A DS(on) GS D D Low Profile 0.8 mm Maximum in the New Package WDFN6 D S Pin 1 (MicroFET 2.05 2.05 mm) Drain HBM ESD Protection Level > 1 kV Typical (Note 3) Source D Free from Halogenated Compounds and Antimony Oxides D G RoHS Compliant (Bottom View) MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) WDFN6 2.05x2.05, 0.65P A CASE 483AV Symbol Parameter Ratings Unit V Drain to Source Voltage 20 V DS MARKING DIAGRAM V Gate to Source Voltage 8 V GS I Drain Current Continuous (Note 1a) 11 A D Pulsed (Note 5) 164 &2&K &Z008 E Single Pulse Avalanche Energy (Note 4) 54 mJ AS P Power (Note 1a) 2.4 W D Dissipation (Note 1b) 0.9 &2 = Date Code &K = Lot Code T , T Operating and Storage Junction 55 to C J STG Temperature Range +150 &Z = Assembly Plant Code 008 = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL CHARACTERITICS Device Symbol Parameter Ratings Unit Marking Device Package Shipping R Thermal Resistance, (Note 1a) 52 C/W JA 008 FDMA008P20LZ WDFN6 3000 Units/ Junction to Ambient (PbFree) Tape & Reel (Note 1b) 145 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: December, 2020 Rev. 2 FDMA008P20LZ/DFDMA008P20LZ ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 20 V DSS D GS BV Breakdown Voltage Temperature I = 250 A, 16 mV/C DSS D Coefficient referenced to 25C T J I Zero Gate Voltage Drain Current V = 16 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 8 V, V = 0 V 1 A GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 0.4 0.65 1.4 V GS(th) GS DS D V Gate to Source Threshold Voltage I = 250 A, 3 mV/C GS(th) D Temperature Coefficient referenced to 25C T J r Static Drain to Source On Resistance V = 4.5 V, I = 2.5 A 10 13 m DS(on) GS D V = 2.5 V, I = 1.4 A 12 16 GS D V = 1.8 V, I = 1.0 A 15 20 GS D V = 1.5 V, I = 0.85 A 20 30 GS D V = 4.5 V, I = 2.5 A, 12.8 GS D T = 125C J g Forward Transconductance V = 5 V, I = 2.5 A 26 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 10 V, V = 0 V, 3131 4383 pF iss DS GS f = 1 MHz C Output Capacitance 424 594 oss C Reverse Transfer Capacitance 386 540 rss R Gate Resistance 13 25 g SWITCHING CHARACTERISTICS t TurnOn Delay Time V = 10 V, I = 2.5 A, 12 21 ns d(on) DD D V = 4.5 V, R = 6 GS GEN t Rise Time 17 30 r t TurnOff Delay Time 239 382 d(off) t Fall Time 96 153 f Q Total Gate Charge V = 4.5 V, V = 10 V, I 28 39 nC g GS DD D = 2.5 A Q Gate to Source Gate Charge 3.6 gs Q Gate to Drain Miller Charge 6.2 gd DRAINSOURCE DIODE CHARACTERISTICS V Source to Drain Diode Forward Voltage V = 0 V, I = 2 A (Note 2) 0.6 1.2 V SD GS S V = 0 V, I = 2.5 A (Note 2) 0.8 1.3 V GS S t Reverse Recovery Time I = 6.8 A, 28 46 ns rr F di/dt = 100 A/ S Q Reverse Recovery Charge 10 17 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. R is the sum of the junctiontocase and casetoambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. a. 52 C/W when mounted on b. 145 C/W when mounted on 2 a 1 in pad of 2 oz copper a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied. 4. E of 54 mJ is based on starting T = 25C, L = 3 mH, I = 6 A, V = 20 V, V = 4.5 V. 100% test at L = 0.1 mH, I = 19 A. AS J AS DD GS AS 5. Pulsed Id please refer to Figure 10. SOA curve for more details. www.onsemi.com 2