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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMA1027P Dual P-Channel PowerTrench MOSFET July 2014 FDMA1027P Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package -3.0 A, -20V. R = 120 m V = -4.5 V solution for the battery charge switch in cellular handset DS(ON) GS and other ultra-portable applications. It features two R = 160 m V = -2.5 V DS(ON) GS independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When R = 240 m V = -1.8 V DS(ON) GS connected in the typical common source configuration, bi-directional current flow is possible. Low Profile - 0.8 mm maximun - in the new package The MicroFET 2x2 package offers exceptional thermal MicroFET 2x2 mm performance for it s physical size and is well suited to linear RoHS Compliant mode applications. Free from halogenated compounds and antimony oxides PIN1 S1 G1 D2 1 S1 6 D1 D1 D2 2 5 G2 G1 D2 3 4 S2 G2 S2 D1 MicroFET 2X2 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V MOSFET Drain-Source Voltage -20 V DSS V MOSFET Gate-Source Voltage 8V GSS -3.0 Drain Current -Continuous (Note 1a) I A D -Pulsed -6 1.4 (Note 1a) Power dissipation (Note 1b) 0.7 P D W 1.8 (Note 1c) (Note 1d) 0.8 o T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance for Single Operation, Junction-to-Ambient (Note 1a) 86 JA R Thermal Resistance for Single Operation, Junction-to-Ambient (Note 1b) 173 JA o C/W R Thermal Resistance for Dual Operation, Junction-to-Ambient (Note 1c) 69 JA R Thermal Resistance for Dual Operation, Junction-to-Ambient (Note 1d) 151 JA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity 027 FDMA1027P 7 8mm 3000 units 20 10 Fairchild Semiconductor Corporation 1 FDMA1027P Rev.D6