ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDMA3028N Dual N-Channel PowerTrench MOSFET FDMA3028N Dual N-Channel PowerTrench MOSFET 30 V, 3.8 A, 68 m Features General Description This device is designed specifically as a single package solution Max . R = 68 m at V = 4.5 V, I = 3.8 A DS(on) GS D for dual switching requirements in cellular handset and other Max . R = 88 m at V = 2.5 V, I = 3.4 A ultra-portable applications. It features two inde pendent DS(on) GS D N-Channel MOSFETs with low on-state resistance for minimum Max . R = 123 m at V = 1.8 V, I = 2.9 A DS(on) GS D conduction losses. The MicroFET 2x2 package offe rs exceptional thermal performance for its physical size and is well Low profile - 0. 8 mm maximum - in the new package suited to linear mode applications. MicroFET 2x2 mm RoHS Compliant PIN 1 S1 G1 D2 1 S1 6 D1 D1 D2 G2 G1 2 5 D2 3 S2 4 D1 G2 S2 Top Bottom MicroFET 2x2 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 12 V GS Drain Current -Continuous (Note 1a) 3.8 I A D -Pulsed 16 Power Dissipation (Note 1a) 1.5 P W D Power Dissipation (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) 86 Thermal Resistance for Single Operation, Junction to Ambient (Note 1b) 173 Thermal Resistance for Dual Operation, Junction to Ambient (Note 1c) 69 R C/W JA Thermal Resistance for Dual Operation, Junction to Ambient (Note 1d) 151 Thermal Resistance for Single Operation, Junction to Ambient (Note 1e) 160 Thermal Resistance for Dual Operation, Junction to Ambient (Note 1f) 133 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 328 FDMA3028N MicroFET 2X2 7 8 mm 3000 units 2013 ON Semiconductor Components Industries,LLC Product Order Number: August-2017.Rev3 FDMA3028N/D