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FDMA908PZ Single P-Channel PowerTrench MOSFET February 2014 FDMA908PZ Single P-Channel PowerTrench MOSFET -12 V, -12 A, 12.5 m Features Max r = 12.5 m at V = -4.5 V, I = -12 A General Description DS(on) GS D Max r = 18 m at V = -2.5 V, I = -10 A This device is designed specifically for battery charge or load DS(on) GS D switching in cellular handset and other ultraportable applications. Max r = 28 m at V = -1.8 V, I = -8 A DS(on) GS D It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package Low Profile - 0.8 mm maximum in the new package MicroFET offers exceptional thermal performance for its physical size and 2x2 mm is well suited to linear mode applications. HBM ESD protection level > 2.8 kV typical (Note 3) Free from halogenated compounds and antimony oxides RoHS Compliant Pin 1 G D D Bottom Drain Contact D D Drain Source D D G S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -12 V DS V Gate to Source Voltage 8 V GS Drain Curre -Continuous T = 25 C (Note 1a) -12 A I A D -Pulsed -40 Power Dissipation T = 25 C (Note 1a) 2.4 A P W D Power Dissipation T = 25 C (Note 1b) 0.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 52 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 145 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 908 FDMA908PZ MicroFET 2X2 7 12 mm 3000 units 1 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMA908PZ Rev.E3