X-On Electronics has gained recognition as a prominent supplier of FDMB2307NZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDMB2307NZ MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDMB2307NZ ON Semiconductor

FDMB2307NZ electronic component of ON Semiconductor
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Part No.FDMB2307NZ
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) Common Drain 800mW Surface Mount 6-MLP (2x3)
Datasheet: FDMB2307NZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.412 ea
Line Total: USD 1236 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.4034
6000 : USD 0.4034
9000 : USD 0.4034

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6774
10 : USD 0.5347
100 : USD 0.5267
500 : USD 0.5161
1000 : USD 0.5161
3000 : USD 0.5161

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1873
10 : USD 1.02
100 : USD 0.7951
500 : USD 0.6568
1000 : USD 0.5185

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1873
10 : USD 1.02
100 : USD 0.7951
500 : USD 0.6568
1000 : USD 0.5185

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.5041
6000 : USD 0.4598
15000 : USD 0.4424

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1313
Multiples : 1050
1313 : USD 0.2407

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 2.619
10 : USD 0.9844
100 : USD 0.7377
500 : USD 0.6091
1000 : USD 0.4806
3000 : USD 0.4515

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0435
5 : USD 0.8671
25 : USD 0.6242
69 : USD 0.5971

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.412
6000 : USD 0.4046
12000 : USD 0.3965

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Continuous Drain Current
Power Dissipation
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDMB2307NZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDMB2307NZ and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMB2307NZ Dual Common Drain N-Channel PowerTrench MOSFET April 2014 FDMB2307NZ Dual Common Drain N-Channel PowerTrench MOSFET 20 V, 9.7 A, 16.5 m Features General Description Max r = 16.5 m at V = 4.5 V, I = 8 A S1S2(on) GS D This device is designed specifically as a single package solution Max r = 18 m at V = 4.2 V, I = 7.4 A for Li-Ion battery pack protection circuit and other ultra-portable S1S2(on) GS D applications. It features two common drain N-channel Max r = 21 m at V = 3.1 V, I = 7 A S1S2(on) GS D MOSFETs, which enables bidirectional current flow, on Max r = 24 m at V = 2.5 V, I = 6.7 A S1S2(on) GS D process with state of the art Fairchilds advanced PowerTrench Low Profile - 0.8 mm maximum - in the new package MicroFET Leadframe, the FDMB2307NZ minimizes both PCB MicroFET 2x3 mm . space and r S1S2(on) HBM ESD protection level > 2 kV (Note 3) Application RoHS Compliant Li-Ion Battery Pack Pin 1 S1 S1 G1 Pin 1 3 4 G1 G2 D1/D2 5 S2 2 S1 S2 6 1 S1 S2 S2 G2 Top Bottom MLP 2x3 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Source1 to Source2 Voltage 20 V S1S2 V Gate to Source Voltage (Note 4) 12 V GS Source1 to Source2 Current -Continuous T = 25C (Note 1a) 9.7 A I A S1S2 -Pulsed 40 Power Dissipation T = 25 C (Note 1a) 2.2 A P W D Power Dissipation T = 25 C (Note 1b) 0.8 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient(Dual Operation) (Note 1a) 57 JA C/W R Thermal Resistance, Junction to Ambient(Dual Operation) (Note 1b) 161 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 307 FDMB2307NZ MLP 2x3 7 8 mm 3000 units 1 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMB2307NZ Rev.C7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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