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FDMC007N08LC N-Channel Shielded Gate PowerTrench MOSFET November 2016 FDMC007N08LC N-Channel Shielded Gate PowerTrench MOSFET 80 V, 66 A, 7.0 m Features General Description Shielded Gate MOSFET Technology This N-Channel MV MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max r = 7.0 m at V = 10 V, I = 21 A DS(on) GS D incorporates Shielded Gate technology. This process has been Max r = 10.4 m at V = 4.5 V, I = 17 A optimized to minimise on-state resistance and yet maintain DS(on) GS D superior switching performance with best in class soft body 5V Drive Capable diode. 50% lower Qrr than other MOSFET suppliers Applications Lowers switching noise/EMI Primary DC-DC MOSFET MSL1 robust package design Synchronous Rectifier in DC-DC and AC-DC 100% UIL tested Motor Drive RoHS Compliant Solar Pin 1 Pin 1 S S S D S G S D S D D D D D G D Top Bottom Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 5) 66 C -Continuous T = 100 C (Note 5) 42 C I A D -Continuous T = 25 C (Note 1a) 14 A -Pulsed (Note 4) 330 E Single Pulse Avalanche Energy (Note 3) 150 mJ AS Power Dissipation T = 25 C 57 C P W D Power Dissipation T = 25 C (Note 1a) 2.4 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.2 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC007N08L FDMC007N08LC Power 33 13 12 mm 3000 units 2016 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMC007N08LC Rev.1.0