STB35N65DM2 STMicroelectronics

STB35N65DM2 N-channel 650 V, 0.093 typ., 32 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - preliminary data Features R DS(on) TAB Order code VDS ID PTOT max. STB35N65DM2 650 V 0.110 32 A 250 W 2 3 Fast-recovery body diode 1 Extremely low gate charge and input capacitance D PAK Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STB35N65DM2 35N65DM2 DPAK Tape and reel January 2018 DocID030840 Rev 2 1/15 www.st.com This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STB35N65DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-263) type A2 mechanical data ....................................... 9 4.2 DPAK (TO-263) packing information .............................................. 12 5 Revision history ............................................................................ 14 2/15 DocID030840 Rev 2