DMP3018SFVQ 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits 100% Unclamped Inductive Switching (Test in Production) I Max D BV R Max DSS DS(ON) Ensures More Reliable and Robust End Application T = +25C C Low R ensures on-state losses are minimized DS(ON) 12m V = -10V -35A GS -30V Small form factor thermally efficient package enables higher 21m V = -4.5V -25A GS density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product ESD Protected Gate Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance Qualified to AEC-Q101 Standards for High Reliability (R ) and yet maintain superior switching performance, making it DS(ON) PPAP Capable (Note 4) ideal for high-efficiency power management applications. Mechanical Data Case: PowerDI 3333-8 (Type UX) Applications Case Material: Molded Plastic,Gree Molding Compound. Backlighting UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.03 grams (Approximate) D Pin1 S S S G G ESD PROTECTED D Gate Protection D S Diode D D Top View Equivalent Circuit Bottom View Ordering Information (Note 5) Part Number Case Packaging DMP3018SFVQ-7 PowerDI3333-8 (Type UX) 2,000/Tape & Reel DMP3018SFVQ-13 PowerDI3333-8 (Type UX) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP3018SFVQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C -11 A Continuous Drain Current (Note 7) V = -10V I A GS D State -9 T = +70C A Steady T = +25C -35 C Continuous Drain Current (Note 8) V = -10V I A GS D State -25 T = +70C C Maximum Continuous Body Diode Forward Current (Note 8) I -30 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -70 A DM Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I -70 A SM Avalanche Current (Note 9) L = 1mH I -14 A AS Avalanche Energy (Note 9) L = 1mH 104 mJ EAS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) T = +25C P 1.0 W A D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 133 C/W JA Total Power Dissipation (Note 7) T = +25C P 1.9 W A D Steady State Thermal Resistance, Junction to Ambient (Note 7) R 66 C/W JA Total Power Dissipation (Note 8) P 30 W D Thermal Resistance, Junction to Case (Note 8) 3.7 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -24V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage V -1.0 -3.0 V V = V , I = -250A GS(TH) DS GS D 12 V = -10V, I = -11.5A GS D Static Drain-Source On-Resistance R m DS(ON) 21 V = -4.5V, I = -8.5A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance pF C 2147 iss V = -15V, V = 0V, DS GS Output Capacitance C 407 pF oss f = 1.0MHz Reverse Transfer Capacitance C 358 pF rss Gate Resistance R 24 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = -5V) Q 28 nC GS g Total Gate Charge (V = -10V) Q 51 nC GS g V = -15V, I = -11.5A DS D Gate-Source Charge Q 6.6 nC gs Gate-Drain Charge Q 15 nC gd Turn-On Delay Time ns t 7.8 D(ON) Turn-On Rise Time ns V = -15V, V = -10V, t 19.9 DD GS R Turn-Off Delay Time ns t 57.5 R = 6, I = -11.5A D(OFF) G D Turn-Off Fall Time ns t 42.8 F Reverse Recovery Time t 21.5 ns RR I = -11.5A, dI/dt = 100A/s S Reverse Recovery Charge Q 11.6 nC RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. 2 of 7 DMP3018SFVQ April 2018 Diodes Incorporated www.diodes.com Document number: DS40798 Rev. 2 - 2 ADVANCED INFORMATION