DMN3008SFGQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low R Ensures on-state losses are minimized DS(ON) I max D BV R max DSS DS(ON) Small, form factor thermally efficient package enables higher T = +25C C density end products 4.4m V = 10V 62A GS Occupies only 33% of the board area occupied by SO-8 enabling 30V 5.5m V = 4.5V 56A GS smaller end products 100% Unclamped Inductive Switch (UIS) Test in Production Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to meet the stringent requirements of Qualified to AEC-Q101 Standards for High Reliability Automotive applications. It is qualified to AEC-Q101, supported by a PPAP Capable (Note 4) PPAP and is ideal for use in: Mechanical Data Backlighting Power Management Functions Case: PowerDI3333-8 DC-DC Converters Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 D Pin 1 S S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMN3008SFGQ-7 PowerDI3333-8 2,000/Tape & Reel DMN3008SFGQ-13 PowerDI3333-8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3008SFGQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 17.6 A I A D State 14.1 T = +70C A T = +25C 23.0 A t<10s A Continuous Drain Current (Note 7) V = 10V I GS D 18.4 T = +70C A Steady T = +25C 62 C I A D State T = +70C C Pulsed Drain Current (10s pulse, duty cycle = 1%) 80 A I DM Maximum Continuous Body Diode Forward Current (Note 7) 2 A I S Avalanche Current, L = 0.1mH 45 A I AS Avalanche Energy, L = 0.1mH 101 mJ E AS Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units T = +25C 0.9 A Total Power Dissipation (Note 6) P W D 0.6 TA = +70C Steady State 134 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t < 10s 79 C/W T = +25C 2.1 A Total Power Dissipation (Note 7) P W D 1.3 T = +70C A Steady State 58 C/W Thermal Resistance, Junction to Ambient (Note 7) R JA t < 10s 34 C/W Thermal Resistance, Junction to Case (Note 7) 4.8 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 10 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1 2.3 V V = V , I = 250A GS(TH) DS GS D 3.9 4.4 V = 10V, I = 13.5A GS D Static Drain-Source On-Resistance m R DS(ON) 4.6 5.5 V = 4.5V, I = 13.5A GS D Diode Forward Voltage 0.75 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 3,690 pF C iss V = 10V, V = 0V, DS GS Output Capacitance 530 pF C oss f = 1MHz Reverse Transfer Capacitance 459 pF C rss Gate Resistance 0.9 R V = 0V, V = 0V, f = 1MHz g DS GS 41 nC Total Gate Charge (V = 4.5V) Q GS g Total Gate Charge (V = 10V) Q 86 nC GS g V = 24V, I = 27A DS D Gate-Source Charge Q 9.2 nC gs Gate-Drain Charge Q 18.6 nC gd Turn-On Delay Time t 5.7 ns D(ON) V = 15V, V = 10V, DD GS Turn-On Rise Time 14.0 ns tR R = 1.11, R = 4.7, L G Turn-Off Delay Time 63.7 ns t D(OFF) I = 13.5A D Turn-Off Fall Time 28.4 ns t F Reverse Recovery Time 19.3 ns t RR I = 13.5A, di/dt=100A/s F Reverse Recovery Charge 10.7 nC Q RR Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 DMN3008SFGQ May 2016 Diodes Incorporated www.diodes.com Document number: DS38901 Rev. 1 - 2 ADVANCE INFORMATION