STB38N65M5 STMicroelectronics

STB38N65M5, STP38N65M5, STW38N65M5 N-channel 650 V, 0.073 typ., 30 A MDmesh V Power MOSFETs 2 in D PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB V R 2 DS DS(on) Order codes I D 3 T max Jmax 1 2 STB38N65M5 D PAK STP38N65M5 710 V 0.095 30 A TAB STW38N65M5 Higher V rating and high dv/dt capability DSS 3 3 Excellent switching performance 2 2 1 1 100% avalanche tested TO-220 TO-247 Applications Figure 1. Internal schematic diagram Switching applications % 7 Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is * combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- 6 based Power MOSFETs, making it especially suitable for applications which require superior 0 Y power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging 2 STB38N65M5 D PAK Tape and reel STP38N65M5 38N65M5 TO-220 Tube STW38N65M5 TO-247 April 2014 DocID022851 Rev 4 1/21 This is information on a product in full production. www.st.com 21Contents STB38N65M5, STP38N65M5, STW38N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 4.1 D2PAK, STB38N65M5 11 4.2 TO-220, STP38N65M5 . 14 4.3 TO-247, STW38N65M5 16 5 Packaging mechanical data 18 6 Revision history . 20 2/21 DocID022851 Rev 4