STB33N60M2 N-channel 600 V, 0.108 typ., 26 A MDmesh M2 Power MOSFET in a DPAK package Features TAB V T max. R max. I Order code DS J DS(on) D STB33N60M2 650 V 0.125 26 A 2 3 Extremely low gate charge 1 Excellent output capacitance (C ) profile OSS 100% avalanche tested DPAK Zener-protected D(2, TAB) Applications Switching applications LLC converters, resonant converters G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) AM01475V1 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STB33N60M2 Product summary Order code STB33N60M2 Marking 33N60M2 Package DPAK Packing Tape and reel DS9930 - Rev 3 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB33N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 26 A C I D Drain current (continuous) at T = 100 C 16 A C (1) I Drain current (pulsed) 104 A DM P Total power dissipation at T = 25 C 190 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns dv/dt T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 26 A, di/dt 400 A/s, V < V , V = 400 V. SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.66 C/W thj-case (1) R Thermal resistance junction-pcb 30 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 450 mJ AS J D AR DD DS9930 - Rev 3 page 2/17