STB40N60M2 STMicroelectronics

STB40N60M2, STP40N60M2, STW40N60M2 N-channel 600 V, 0.078 typ., 34 A MDmesh M2 2 Power MOSFETs in D PAK, TO-220 and TO-247 packages Datasheet production data Features TAB TAB Order code V T R max I DS Jmax DS(on) D 2 STB40N60M2 3 1 3 2 2 STP40N60M2 650 V 0.088 34 A D PAK 1 STW40N60M2 TO-220 Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested 3 Zener-protected 2 1 TO-247 Applications Switching applications Figure 1. Internal schematic diagram LLC converters, resonant converters 7 % Description These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. * Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. 6 AM01476v1 Table 1. Device summary Order code Marking Packages Packing 2 STB40N60M2 D PAK Tape and reel STP40N60M2 40N60M2 TO-220 Tube STW40N60M2 TO-247 August 2016 DocID024932 Rev 4 1/21 This is information on a product in full production. www.st.comContents STB40N60M2, STP40N60M2, STW40N60M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package information 10 2 4.1 D PAK (TO-263) package information 11 4.2 TO-220 package information 14 4.3 TO-247 package information 16 5 Packing information 18 6 Revision history . 20 2/21 DocID024932 Rev 4