STB45N30M5 Datasheet N-channel 300 V, 53 A, 0.037 typ., MDmesh M5 Power MOSFET 2 in a D PAK package Features TAB Order code V R max. I DS DS(on) D STB45N30M5 300 V 0.040 53 A 2 Extremely low R 3 DS(on) 1 Low gate charge and input capacitance Excellent switching performance DPAK 100% avalanche tested D(2, TAB) Applications Switching applications G(1) Description S(3) This device is an N-channel Power MOSFET based on the MDmesh M5 innovative AM01475v1 noZen vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. Product status link STB45N30M5 Product summary Order code STB45N30M5 Marking 45N30M5 2 Package D PAK Packing Tape and reel DS12585 - Rev 1 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB45N30M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 53 case I A D Drain current (continuous) at T = 100 C 34 case (1) I Drain current (pulsed) 212 A DM P Total dissipation at T = 25 C 250 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 53 A, di/dt 400 A/s, V peak < V ,V = 240 V SD DS (BR)DSS DD Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 thj-case C/W (1) R Thermal resistance junction-pcb 30 thj-pcb 1. When mounted on an 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 16 A AR (pulse width limited by T max) j Single pulse avalanche energy E 550 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS12585 - Rev 1 page 2/15