X-On Electronics has gained recognition as a prominent supplier of F15F60C3M-7600 MOSFETs across the USA, India, Europe, Australia, and various other global locations. F15F60C3M-7600 MOSFETs are a product manufactured by Shindengen. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

F15F60C3M-7600 Shindengen

F15F60C3M-7600 electronic component of Shindengen
F15F60C3M-7600 Shindengen
F15F60C3M-7600 MOSFETs
F15F60C3M-7600 Semiconductors

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See Product Specifications
Part No. F15F60C3M-7600
Manufacturer: Shindengen
Category: MOSFETs
Description: MOSFET Hi Switching Speed High Voltage
Datasheet: F15F60C3M-7600 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.85 ea
Line Total: USD 6.85 
Availability - 32
Ship by Fri. 02 May to Tue. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1

 F15F60C3M-7600 More Buying Options & Price Grid(s)

Availability Price Quantity
32
Ship by Fri. 02 May to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 6.85
10 : USD 5.06
100 : USD 4.334
500 : USD 3.927
1000 : USD 3.63

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Packaging
Technology
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Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the F15F60C3M-7600 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the F15F60C3M-7600 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

PowerMOSFET OUTLINE Unitmm PackageFTO-220A F15F60C3M 600V15A 0000 15F60C3M Feature LowR ON FastSwitching IsolatedPackage Web Fordetailsoftheoutlinedimensions,refertoourwebsite.Asforthe marking,refertothespecificatioMarking,TerminalConnectio. RATINGS AbsoluteMaximumRatings Tc25 Item Symbol Conditions Ratings Unit Tstg 55150 StorageTemperature Tch 150 ChannelTemperature VDSS 600 Drain-SourceVoltage V VGSS 30 Drain-SourceVoltage I 15 D ContinuousDrainCurrent(DC) 10s,duty=1/100 I 45 DP ContinuousDrainCurrent(Peak) Pulsewidth10s,duty=1/100 A IS 15 ContinuousSourceCurrent(DC) PT 55 W TotalPowerDissipation AC1 Vdis 2 kV DielectricStrength Terminalstocase,AC1minute 0.3Nm TOR 0.5 Nm MountingTorque (Recommendedtorque:0.3Nm) ElectricalCharacteristics Tc25 Ratings Item Symbol Conditions Unit MIN TYP MAX VBRDSS ID1mA,VGS0V 600 V Drain-SourceBreakdownVoltage IDSS VDS600V,VGS0V 25 ZeroGateVoltageDrainCurrent A I V 30V,V 0V 0.1 GSS GS DS Gate-SourceLeakageCurrent gfs I7.5A,V 10V 6.0 11.9 S D DS ForwardTransconductance RDSON ID7.5A,VGS10V 0.25 0.28 StaticDrain-SourceOn-stateResistance VTH ID0.5mA,VDS10V 2.1 3.0 3.9 GateThressholdVoltage V VSD IS7.5A,VGS0V 1.5 Source-DrainDiodeForwadeVoltage jc 2.27 /W ThermalResistance Junctiontocase Qg V 10V,I15A,V 400V 56 nC GS D DD TotalGateCharge Ciss 1600 InputCapacitance Crss VDS25V,VGS0V,f1MHz 40 pF ReverseTransferCapacitance Coss 510 OutputCapacitance tdon 26 Turn-ondelaytime tr 42 I7.5A,V 150V,R20 Risetime D DD L ns VGS10V,VGS0V tdoff 240 Turn-offdelaytime tf 36 Falltime MOSFET2010.06 www.shindengen.co.jp/product/semi/F15F60C3M CHARACTERISTICDIAGRAMS Typical Output Characteristics Transfer Characteristics Static Drain-Source On-static Resistance vs Drain Current Static Drain-Source On-static Resistance vs Case Temperature Gate Threshold Voltage vs Case emperature Safe Operating Area Transient Thermal Impedance Capacitance Characteristics Power Derating - Case Temperature Gate Charge Characteristics Sinewave50Hz 50Hzsinewaveisusedformeasurements. MOSFET2010.06 www.shindengen.co.jp/product/semi/

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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