DMT6010LSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
I max 100% Unclamped Inductive Switch (UIS) Test in Production
D
BV R max
DSS DS(ON)
T = 25C High Conversion Efficiency
A
Low R Minimizes On-State Losses
DS(ON)
8m @ V = 10V 14.0A
GS
Low Input Capacitance
60V
Fast Switching Speed
12m @ V = 4.5V 11.5A
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications Mechanical Data
This new generation N-Channel Enhancement Mode MOSFET is Case: SO-8
designed to minimize R , yet maintain superior switching
DS(ON) Case Material: Molded Plastic,Gree Molding Compound.
performance. This device is ideal for use in notebook battery power
UL Flammability Classification Rating 94V-0
management and loadswitch.
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Backlighting
Solderable per MIL-STD-202, Method 208
Power Management Functions Weight: 0.074 grams (Approximate)
DC-DC Converters
D
S D
SO-8
S
D
S
D
G
G
D
S
Top View
Equivalent Circuit
Top View Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMT6010LSS-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMT6010LSS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 60 V
DSS
Gate-Source Voltage V 20 V
GSS
Steady
T = +25C 14.0
A
I A
D
State
11.0
T = +70C
A
Continuous Drain Current (Note 6) V = 10V
GS
T = +25C 16.7
A
t<10s A
I
D
13.5
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 6) I 3 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A
DM
Avalanche Current, L = 0.1mH I 20 A
AS
Avalanche Energy, L = 0.1mH E 20 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P 1.5 W
D
Steady State 80 C/W
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
t<10s 48 C/W
Total Power Dissipation (Note 6) P 2.0 W
D
Steady State 53 C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<10s 37 C/W
Thermal Resistance, Junction to Case (Note 6) R 6.5 C/W
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 60 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 0.8 2.0 V V = V , I = 250A
GS(TH) DS GS D
6 8 V = 10V, I = 20A
GS D
Static Drain-Source On-Resistance m
R
DS(ON)
8 12 V = 4.5V, I = 20A
GS D
Diode Forward Voltage 0.9 1.2 V
VSD VGS = 0V, IS = 20A
DYNAMIC CHARACTERISTICS (Note 8)
2,090
Input Capacitance
Ciss
V = 30V, V = 0V,
DS GS
Output Capacitance 746 pF
C
oss
f = 1MHz
Reverse Transfer Capacitance 38.5
C
rss
Gate resistance 0.59
R V = 0V, V = 0V, f = 1MHz
G DS GS
19.3
Total Gate Charge (V = 4.5V) Q
GS g
41.3
Total Gate Charge (V = 10V) Q
GS g
nC
V = 30V, I = 20A
DS D
6.0
Gate-Source Charge Q
gs
8.8
Gate-Drain Charge Q
gd
5.7
Turn-On Delay Time t
D(ON)
4.3
Turn-On Rise Time t
R V = 30V, V = 10V,
DD GS
ns
23.4
Turn-Off Delay Time I = 20A, R = 3
t D G
D(OFF)
Turn-Off Fall Time 9.7
t
F
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMT6010LSS November 2015
Diodes Incorporated
www.diodes.com
Document number: DS37362 Rev. 1 - 2
NEW PRODUCT
ADVANCE INFORMATION
ADVANCED INFORMATION