DMN3025LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits I Max Low R Ensures On State Losses are Minimized D DS(ON) BV R Max DSS DS(ON) T = +25C C Small Form Factor Thermally Efficient Package Enables Higher Density End Products 18m V = 10V GS 25A 30V Occupies just 33% of the Board Area Occupied by SO-8 Enabling 30m V = 4.5V GS 20A Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI 3333-8 (Type UX) (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections Indicator: See Diagram DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 (Type UX) Pin1 D S S S G G D D D S D Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN3025LFV-7 2,000/Tape & Reel PowerDI3333-8 (Type UX) DMN3025LFV-13 3,000/Tape & Reel PowerDI3333-8 (Type UX) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3025LFV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS T = +25C 25 C I A Continuous Drain Current (Note 7) V = 10V D GS 20 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 55 A I DM Maximum Continuous Body Diode Forward Current (Note 6) 3 A I S Avalanche Current, L = 0.1mH (Note 8) 14 A I AS Avalanche Energy, L = 0.1mH (Note 8) E 9.8 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.9 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) 146 C/W R JA Total Power Dissipation (Note 6) P 2.2 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) 57 R JA C/W Thermal Resistance, Junction to Case (Note 7) 4.5 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I - - 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage 1.0 - 2.0 V V V = V , I = 250A GS(TH) DS GS D - 13 18 V = 10V, I = 7A GS D Static Drain-Source On-Resistance R m DS(ON) - 21 30 V = 4.5V, I = 7A GS D Diode Forward Voltage - 0.7 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance - 500 - pF C iss V = 15V, V = 0V, DS GS Output Capacitance C - 72 - pF oss f = 1MHz Reverse Transfer Capacitance C - 57 - pF rss Gate Resistance R - 1.9 - V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q - 4.6 - nC GS g Total Gate Charge (V = 10V) Q - 9.8 - nC GS g V = 15V, I = 10A DS D Gate-Source Charge - 1.6 - nC Q gs Gate-Drain Charge - 2.0 - nC Q gd Turn-On Delay Time - 3.9 - ns t D(ON) Turn-On Rise Time - 4.2 - ns t V = 15V, V = 10V, R DD GS Turn-Off Delay Time - 16.6 - ns t Rg = 6, ID = 1A D(OFF) Turn-Off Fall Time t - 5.8 - ns F Body Diode Reverse Recovery Time t - 5.6 - ns RR I = 12A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 2.6 - nC RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMN3025LFV December 2017 Diodes Incorporated www.diodes.com Document number: DS39950 Rev. 2 - 2 ADVANCE INFORMATION ADVANCED INFORMATION