DMN2044UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Ultra Small 1.0mm x 1.0mm Package I D Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) BV R DSS DS(ON) Max T = +25C A Halogen and Antimony Free. Green Device (Note 3) t =10s 40m V = 4.5V 4.5A GS 50m V = 2.5V 4.2A GS 20V 56m V = 1.8V 4.0A GS 70m V = 1.5V 1.5A GS Mechanical Data Description and Applications Case: U-WLB1010-4 (Type B) Moisture Sensitivity: Level 1 per J-STD-020 This new generation MOSFET is designed to minimize the on-state Terminal: Finish SnAgCu. Solderable per MIL-STD-202 Method resistance (R ) and yet maintain superior switching performance, DS(ON) 208 making it ideal for high efficiency power management applications. It Terminal Connections: See Diagram is a high performance MOSFET in ultra-small 1.0mm x 1.0mm package. Portable Applications Load Switch Power Management Functions Equivalent Circuit Top View Ordering Information (Note 4) Part Number Case Packaging DMN2044UCB4-7 U-WLB1010-4 (Type B) 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2044UCB4 Maximum Ratings Characteristic Symbol Value Unit Drain-Source Voltage 20 V V DSS Gate-Source Voltage V 8 V GSS T = +25C 3.3 A Continuous Source Current V = 4.5V, t=10s (Note 5) I A GS D 2.6 T = +70C A TA = +25C 4.5 A Continuous Source Current V = 4.5V, t=10s (Note 6) I GS D 3.6 T = +70C A Pulsed Drain Current (Pulse Duration 10s, Duty Cycle 1%) 16 A I DM Continuous Source-Drain Diode Current I 1.2 A S Pulse Diode Forward Current I 10 A SM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.72 W D 175 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA 40 Thermal Resistance, Junction to Case (Note 5) C/W RJC Total Power Dissipation (Note 6) 1.18 W P D Thermal Resistance, Junction to Ambient (Note 6) 106 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D 1.0 A V = 20V, V = 0V DS GS Zero Gate Voltage Drain Current I DSS 1.0 mA V = 20V, V = 0V , T = +150C DS GS J Gate-Body Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 0.9 V V = V , I = 250A GS(TH) DS GS D V = 4.5V, I = 1.5A GS D 29 40 32 50 V = 2.5V, I = 1.0A GS D Static Drain-Source On-Resistance m R DS(ON) 36 56 V = 1.8V, I = 1.0A GS D 43 70 V = 1.5V, I = 0.5A GS D Body Diode Forward Voltage 0.7 1.2 V VSD VGS = 0V, IS = 1.5A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 1056 1400 pF iss V = 10V, V = 0V, DS GS Output Capacitance C 117 160 pF oss f = 1.0MHz Reverse Transfer Capacitance C 105 140 pF rss Gate Resistance R 0.98 1.5 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) 13.1 26.5 nC GS Q g Total Gate Charge (V = 8V) 23.2 47 nC GS Q g V = 10V, I = 1.5A DS D Gate-Source Charge 1.4 nC Q gs Gate-Drain Charge 2.1 nC Q gd Reverse Recovery Charge 2.16 6 nC Q RR Body Diode Reverse Recovery Time t 7.92 18 ns RR I = 1.5A, di/dt = 100A/s F Reverse Recovery Fall Time t 6.5 ns A Reverse Recovery Rise Time t 4.12 ns B Turn-On Delay Time t 4.57 10 ns D(ON) Turn-On Rise Time t 6.33 15 ns R V = 10V, I = 1.5A DD D Turn-Off Delay Time 19.84 42 ns V = 4.5V, R = 1, R = 6.7 t GEN G L D(OFF) Turn-Off Fall Time 2.96 6 ns t F Turn-On Delay Time 2.88 6 ns t D(ON) Turn-On Rise Time 6.31 14 ns t V = 10V, I = 1.5A R DD D Turn-Off Delay Time 14.9 30 ns t VGEN = 8V, RG = 1, RL = 6.7 D(OFF) Turn-Off Fall Time t 1.71 4 ns F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 DMN2044UCB4 July 2018 Diodes Incorporated www.diodes.com Document number: DS36818 Rev. 4 - 2 NEW PRODUCT