DMN95H8D5HCTI
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Low Input Capacitance
I
D MAX
BV R Package
DSS DS(ON)
High BV Rating for Power Application
T = +25C DSS
C
ITO220AB Low Input/Output Leakage
950V 2.5A
7@V = 10V
GS
(Type TH)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
This new generation complementary dual MOSFET features low on-
Mechanical Data
resistance and fast switching, making it ideal for high efficiency power
Case: ITO220AB (Type TH)
management applications.
Case Material: Molded Plastic, Green Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Applications
Solderable per MIL-STD-202, Method 208
Motor Control
Terminal Connections: See Diagram Below
Backlighting
Weight: 1.85 grams (Approximate)
DC-DC Converters
Power Management Functions
ITO220AB (Type TH)
Top View
Bottom View
Top View
Pin Out Configuration
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN95H8D5HCTI ITO220AB (Type TH) 50 Pieces/Tube
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
DMN95H8D5HCTI
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 950 V
DSS
Gate-Source Voltage V 30 V
GSS
Continuous Drain Current (Notes 5) T = +25C 2.5
C
I A
D
1.5
V = 10V
GS T = +100C
C
Pulsed Drain Current (Note 6) 3 A
I
DM
Avalanche Current, L = 60mH (Note 7) 1.8 A
I
AS
Avalanche Energy, L = 60mH (Note 7) 97 mJ
E
AS
Peak Diode Recovery dv/dt (Note 7) dv/dt 3.3 V/ns
Thermal Characteristics
Characteristic Symbol Max Unit
30
T = +25C
C
Power Dissipation (Note 5) W
PD
12
T = +100C
C
Thermal Resistance, Junction to Case (Note 5) 4.2 C/W
T = +25C R
C JC
Operating and Storage Temperature Range -55 to +150 C
T , T
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV 950 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 950V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
IGSS VGS = 30V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 3.0 5.0 V
V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance 5.5 7.0
R V = 10V, I = 1A
DS(ON) GS D
Diode Forward Voltage 1.2 V
V V = 0V, I = 2A
SD GS S
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance 470
C
iss
V = 25V, f = 1.0MHz,
DS
Output Capacitance 45
C pF
oss
V = 0V
GS
0.6
Reverse Transfer Capacitance C
rss
1.2
Gate Resistance R V = 0V, V = 0V, f = 1.0MHz
g DS GS
7.9
Total Gate Charge Q
g
V = 720V, I = 2A,
DD D
2.5
Gate-Source Charge Q
gs nC
VGS = 10V
2.9
Gate-Drain Charge
Qgd
16
Turn-On Delay Time
tD(ON)
Turn-On Rise Time 21
t
R V = 450V, R = 25, I = 2A,
DD g D
ns
Turn-Off Delay Time 17.6
t V = 10V
D(OFF) GS
Turn-Off Fall Time 17
t
F
Body Diode Reverse Recovery Time 375 ns
t
RR dI/dt = 100A/s, V = 100V,
DS
2.9
Body Diode Reverse Recovery Charge Q C I = 2A
RR F
Notes: 5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
2 of 7
June 2018
DMN95H8D5HCTI
www.diodes.com Diodes Incorporated
Document number: DS39272 Rev. 3 - 2