DMT6015LSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Low On-Resistance
I Max
D
BV R Max
DSS DS(ON)
Low Input Capacitance
T = +25C
A
9.2A
16m @ V = 10V Fast Switching Speed
GS
60V
21m @ V = 4.5V 7.5A
GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Mechanical Data
Description and Applications
This MOSFET is designed to minimize the on-state resistance Case: SO-8
(R ), maintain superior switching performance, making it ideal for Case Material: Molded Plastic,Gree Molding Compound.
DS(ON)
high efficiency power management applications. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Load Switch Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Adaptor Switch Solderable per MIL-STD-202, Method 208
Notebook PC Weight: 0.076 grams (Approximate)
SO-8
D
S D
S D
Pin1
G
S D
G D
Gate Protection
S
Diode
Pin-Out Equivalent Circuit
Top View
Top View
Ordering Information (Note 4)
Part Number Case Packaging
DMT6015LSS-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMT6015LSS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage 60 V
V
DSS
Gate-Source Voltage 16 V
V
GSS
Steady T = +25C 9.2
A
I A
D
State 7.4
T = +70C
A
Continuous Drain Current (Note 6) V = 10V
GS
T = +25C 11.9
A
t<10s A
ID
9.5
T = +70C
A
Steady T = +25C 7.5
A
I A
D
State 6.0
T = +70C
A
Continuous Drain Current (Note 6) V = 4.5V
GS
T = +25C 9.7
A
t<10s I A
D
7.7
T = +70C
A
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 60 A
I
DM
Maximum Continuous Body Diode Forward Current (Note 6) 2 A
I
S
Avalanche Current, L = 0.1mH 15 A
I
AS
Avalanche Energy, L = 0.1mH 11 mJ
E
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) 1.5 W
P
D
Steady State 85 C/W
Thermal Resistance, Junction to Ambient (Note 5) R
JA
t<10s 45 C/W
Total Power Dissipation (Note 6) 2.1 W
PD
Steady State 74 C/W
Thermal Resistance, Junction to Ambient (Note 6) R
JA
t<10s 37 C/W
Thermal Resistance, Junction to Case R 13 C/W
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage I 10 A V = 16V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 0.5 2.5 V V = V , I = 250A
GS(TH) DS GS D
12.4 16 V = 10V, I = 10A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
15.8 21 VGS = 4.5V, ID = 6A
Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 1,103
C
ISS
V = 30V, V = 0V,
DS GS
Output Capacitance 251 pF
C
OSS
f = 1MHz
Reverse Transfer Capacitance 20
C
RSS
Gate Resistance 1.5
R V = 0V, V = 0V, f = 1MHz
G DS GS
8.9
Total Gate Charge (V = 4.5V) Q
GS G
Total Gate Charge (V = 10V) Q 18.9
GS G
nC
V = 30V, I = 10A
DS D
Gate-Source Charge Q 3.0
GS
Gate-Drain Charge Q 2.8
GD
Turn-On Delay Time t 4.1
D(ON)
Turn-On Rise Time t 7.1
R V = 10V, V = 30V,
GS DS
ns
Turn-Off Delay Time 19.5 R = 6, I = 10A
t G D
D(OFF)
Turn-Off Fall Time 8.6
t
F
Reverse Recovery Time 21.2 ns
T
RR
I = 10A, di/dt = 100A/s
F
Reverse Recovery Charge 13.2 nC
Q
RR
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMT6015LSS May 2016
Diodes Incorporated
www.diodes.com
Document number: DS38799 Rev. 1 - 2