DMT6017LSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Low On-Resistance
I Max
D
BV R Max
DSS DS(ON)
Low Input Capacitance
T = +25C
A
9.2A
18m @ V = 10V Fast Switching Speed
GS
60V
23m @ V = 4.5V 8A
GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Mechanical Data
Description and Applications
This MOSFET is designed to minimize the on-state resistance Case: SO-8
(R ) and maintain superior switching performance, making it Case Material: Molded Plastic,Gree Molding Compound.
DS(ON)
ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0
Load Switch Moisture Sensitivity: Level 1 per J-STD-020
Adaptor Switch Terminal Connections Indicator: See Diagram
Notebook PC Terminals: Finish Matte Tin Annealed over Copper Leadframe.
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.076 grams (Approximate)
D
SO-8
S D
S D
Pin1
G
S
D
G D
S
Pin-Out Equivalent Circuit
Top View
Top View
Ordering Information (Note 4)
Part Number Case Packaging
DMT6017LSS-13 SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMT6017LSS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 60 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C 9.2
A
A
I
D
State 7.4
T = +70C
A
Continuous Drain Current (Note 6) V = 10V
GS
T = +25C 11.9
A
t<10s I A
D
9.5
T = +70C
A
Steady T = +25C 8
A
A
I
D
State 6.5
T = +70C
A
Continuous Drain Current (Note 6) V = 4.5V
GS
T = +25C 10
A
t<10s I A
D
8.1
T = +70C
A
60
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) A
I
DM
Maximum Continuous Body Diode Forward Current (Note 6) 2 A
I
S
Avalanche Current (Note 7) L = 0.1mH 15.3 A
I
AS
Avalanche Energy (Note 7) L = 0.1mH 11.7 mJ
E
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P 1.5 W
D
Steady State 85 C/W
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
t<10s 45 C/W
Total Power Dissipation (Note 6) P 2.1 W
D
Steady State 74 C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<10s 37 C/W
Thermal Resistance, Junction to Case 13 C/W
R
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 60 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 1 2.5 V
V V = V , I = 250A
GS(TH) DS GS D
18
V = 10V, I = 10A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
23 V = 4.5V, I = 6A
GS D
Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C 864
iss
V = 30V, V = 0V,
DS GS
Output Capacitance C 282 pF
oss
f = 1MHz
Reverse Transfer Capacitance C 27
rss
Gate Resistance 1.3
Rg VDS = 0V, VGS = 0V, f = 1MHz
8.4
Total Gate Charge (V = 4.5V) Q
GS g
17
Total Gate Charge (V = 10V) Q
GS g
nC V = 30V, I = 10A
DS D
Gate-Source Charge 3.1
Q
gs
Gate-Drain Charge 4.3
Q
gd
Turn-On Delay Time 3.4
t
D(ON)
Turn-On Rise Time t 5.2 V = 10V, V = 30V,
R GS DS
ns
Turn-Off Delay Time t 13 R = 6, I = 10A
D(OFF) G D
Turn-Off Fall Time t 7
F
Reverse Recovery Time t 22 ns
RR
I = 10A, di/dt = 100A/s
F
Reverse Recovery Charge 11 nC
QRR
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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DMT6017LSS May 2016
Diodes Incorporated
www.diodes.com
Document number: DS38852 Rev. 1 - 2
NEW PRODUCT
ADVANCE INFORMATION
ADVANCED INFORMATION