DMN2036UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits Built-in G-S Protection Diode against ESD 2kV HBM IS VSSS RSS(ON) Max Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) TA = +25C Halogen and Antimony Free. Green Device (Note 3) 24V 36m V = 4.5V 5A GS Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: X2-WLB1616-4 resistance (R ) and making it ideal for high efficiency power SS(ON) Moisture Sensitivity: Level 1 per J-STD-020 management. Terminal Connections: See Diagram Terminal Material: SnAgCu Ball Battery Management Weight: 0.0023 grams (Approximate) Load Switch Battery Protection G1 G2 ESD PROTECTED TO 2kV S1 S2 Top View N-Channel N-Channel Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN2036UCB4-7 X2-WLB1616-4 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2036UCB4 Maximum Ratings Characteristic Symbol Value Unit Source-Source Voltage V 24 V SSS Gate-Source Voltage V 12 V GSS Continuous Source Current Steady T = +25C 5.0 A I A S State 4.0 T = +25C (Note 5) A T = +70C A 30 A Pulsed Source Current T = +25C (Notes 5 & 6) I A SM Thermal Characteristics Characteristic Symbol Value Unit 1.45 W Power Dissipation, T = +25C (Note 5) P A D 86.68 Thermal Resistance, Junction to Ambient T = +25C (Note 5) R C/W A JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Source to Source Breakdown Voltage T = +25C V 24 V I = 1mA, V = 0V J (BR)SS S GS Zero Gate Voltage Source Current T = +25C I 1.0 A V = 20V, V = 0V J SSS SS GS Gate-Body Leakage I 10 A V = 8V, V = 0V GSS GS SS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 1.3 V V = 10V, I = 1.0mA GS(TH) SS S V = 4.5V, I = 3.0A 20 29 36 GS S V = 4.0V, I = 3.0A 20.5 30 37 GS S Static Source-Source On-Resistance R 21 31 39 m V = 3.7V, I = 3.0A SS(ON) GS S 22 33 44 V = 3.1V, I = 3.0A GS S 23 36 52 V = 2.5V, I = 3.0A GS S Forward Transfer Admittance Y 9.4 S V = 10V, I = 3.0A fs SS S Body Diode Forward Voltage V 0.8 1.2 V I = 3.0A, V = 0V F(S-S) F GS DYNAMIC CHARACTERISTICS (Note 8) Total Gate Charge Q 12.6 nC V = 4.5V, V = 10V, I = 6A g GS SS S Turn-On Delay Time t 183 ns D(ON) Turn-On Rise Time t 278 ns R V = 10V, DD Turn-Off Delay Time 738 ns R = 3.33, I = 3.0A t L S D(OFF) Turn-Off Fall Time 572 ns t F 2 2 Notes: 5. Device mounted on FR-4 material with 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 DMN2036UCB4 May 2018 Diodes Incorporated www.diodes.com Document number: DS39428 Rev. 3 - 2