P85W28HP2F RATINGS Absolute Maximum Ratings (Tc=25 / unless otherwise specified Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55150 Channel Temperature Tch 150 Drain-Source Voltage VDSS 280 V Gate-Source Voltage VGSS 30 Continuous Drain CurrentDC ID 85 10s, duty = 1/100 A Continuous Drain CurrentPeak) IDP Pulse width 10s, duty = 1/100 340 Continuous Source CurrentDC IS 85 Total Power Dissipation PT 310 W Repetitive Avalanche Current IAR Starting Tch=25 Tch150 50 A Single Avalanche Energy AS Starting Tch=25 Tch150 240 mJ Repetitive Avalanche Energy AR Starting Tch=25 Tch150 24 mJ di/dt Drain-Source Diode di/dt Strength di/dt Is=50A,Tc=25 350 A/s (:0.5N.m) Mounting Torque TOR (Recommended torque0.5Nm) 0.8 Nm Electrical Characteristics (Tc=25 / unless otherwise specified Ratings Item Symbol Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0V 280 - - V Zero Gate Voltage Drain Current IDSS VDS = 280V, VGS = 0V - - 100 A Gate-Source Leakage Current IGSS VGS = 30V, VDS = 0V - - 0.1 A Forward Tranconductance gfs ID = 42.5A, VDS = 10V 27.5 55.0 - S R(DS)ON Static Drain-Source On-tate Resistance ID = 42.5A, VGS = 10V - 0.035 0.045 Gate Threshold Voltage VTH ID = 3mA, VDS = 10V 2.00 3.45 4.50 V Source-Drain Diode Forward Voltage VSD IS = 42.5A, VGS = 0V - - 1.5 Themal Resistance jc Junction to case - - 0.4 / V = 200V,V = 10V, DD GS Total Gate Charge Qg ID = 85A - 90 - nC Input Capacitance iss - 4440 - C Reverse Transfer Capacitance V = 50V, V = 0V, f = 1MH - 30 - Crss DS GS pF Output Capacitance Coss - 625 - Turn-on delay time td (on) - 118 - I = 42.5A, R = 3.53, D L Rise time tr VDD = 150V, Rg=50 - 246 - ns VGS(+) = 10V, VGS(-) = 0V Turn-off delay time td (off) - 385 - Fall time - 165 - tf Diode Reverse Recovery Time trr IF=85A,VGS=0V - 76 - ns di/dt=100A/s Diode Reverse Recovery Charge Qrr - 150 - nCMTO-3P OUTLINE DIMENSIONS SPECIFICATION (7000) Outline dimensions