DMN3033LSDQ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Low On-Resistance
I max
D
BV R max
DSS DS(ON)
T = +25C Low Gate Threshold Voltage
A
Low Input Capacitance
20m @ V = 10V
GS 6.9A
Fast Switching Speed
30V
Low Input/Output Leakage
27m @ V = 4.5V
GS 5.8A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description Mechanical Data
This MOSFET is designed to minimize the on-state resistance Case: SO-8
(R ) and yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound;
DS(on)
UL Flammability Classification Rating 94V-0
ideal for high-efficiency power management applications.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Backlighting
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Power Management Functions
Solderable per MIL-STD-202, Method 208
DC-DC Converters
Weight: 0.072grams (Approximate)
SO-8
D1 D2
S1 D1
G1 D1
S2
D2
G1
G2
G2
D2
Top View
S1 S2
N-channel MOSFET
Internal Schematic
Top View
N-channel MOSFET
Ordering Information (Note 5)
Part Number Case Packaging
DMN3033LSDQ-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN3033LSDQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage V 20 V
GSS
Drain Current (Note 6) Steady T = +25C 6.9
A
I A
D
State 5.8
T = +70C
A
Pulsed Drain Current (Note 7) 30 A
I
DM
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) 2 W
P
D
Thermal Resistance, Junction to Ambient 62.5 C/W
R
JA
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 100 nA V = 30V, V = 0V
DSS DS GS
100 nA V = 20V, V = 0V
GS DS
Gate-Source Leakage I
GSS
1 A
V = 25V, V = 0V
GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 1 2.1 V
V V = V , I = 250A
GS(th) DS GS D
13 20 V = 10V, I = 6.9A
GS D
Static Drain-Source On-Resistance R m
DS (ON)
22 27
V = 4.5V, I = 5A
GS D
Forward Transconductance 7 S
g V =5V, I = 6.9A
fs DS D
Diode Forward Voltage (Note 8) V 0.5 1.2 V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C 725 pF
iss
VDS = 15V, VGS = 0V
Output Capacitance C 114 pF
oss
f = 1MHz
Reverse Transfer Capacitance C 92 pF
rss
Gate Resistance R 0.89 V = 0V, V = 0V, f = 1MHz
G GS DS
SWITCHING CHARACTERISTICS (Note 9)
V = 4.5V, V = 15V, I =5A
6.4 GS DS D
Total Gate Charge nC
Q
g
13
V = 10V, V = 15V, I = 6.9A
GS DS D
Gate-Source Charge 1.9 nC
Q V = 4.5V, V = 15V, I = 6.9A
gs GS DS D
Gate-Drain Charge 3.2 nC
Q V = 4.5V, V = 15V, I = 6.9A
gd GS DS D
Turn-On Delay Time t 11 ns
d(on)
Turn-On Rise Time t 7 ns
r V = 15V, V = 10V,
DD GS
Turn-Off Delay Time t 63 ns R = 1.8, R = 6
d(off) D G
Turn-Off Fall Time t 30 ns
f
Notes: 6. Device mounted on 2 oz. Copper pads on FR-4 PCB with R = 62.5C/W.
JA
7. Pulse width 10S, Duty Cycle 1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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DMN3033LSDQ July 2015
Diodes Incorporated
www.diodes.com
Document number: DS37965 Rev. 1 - 2