DMT3006LFVQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features I Max Low R Ensures On-State Losses are Minimized D DS(ON) BV R Max DSS DS(ON) T = +25C 100% Unclamped Inductive Switching (Test in Production) C Ensures More Reliable and Robust End Application 7m V = 10V GS 30V 60A Small Form Factor Thermally Efficient Package Enables Higher 11m V = 4.5V GS Density End Products Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to minimize the on-state resistance PPAP Capable (Note 4) (R ), yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Mechanical Data Case: PowerDI 3333-8 (Type UX) Applications Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Analog Switch Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.03 grams (Approximate) Pin1 D S S S G G D D S D D Equivalent Circuit Top View Bottom View Ordering Information (Note 5) Part Number Case Packaging DMT3006LFVQ-7 PowerDI3333-8 (Type UX) 2,000/Tape & Reel DMT3006LFVQ-13 PowerDI3333-8 (Type UX) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT3006LFVQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 30 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 60 C Continuous Drain Current, V = 10V (Note 8) I A GS D State 45 T = +70C C Maximum Body Diode Forward Current (Note 8) 2 A IS Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 90 A I DM Pulsed Drain Body Diode Forward Current (380s Pulse, Duty Cycle = 1%) 90 A I SM Avalanche Current (L = 0.1mH) (Note 9) 24 A I AS Avalanche Energy (L = 0.1mH) (Note 9) 29 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 1.0 W P D Steady State Thermal Resistance, Junction to Ambient (Note 6) 130 C/W R JA Total Power Dissipation (Note 7) 2.0 W P D Steady State Thermal Resistance, Junction to Ambient (Note 7) 63 R JA C/W Thermal Resistance, Junction to Case (Note 8) 2.9 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 24V, V = 0V J DSS DS GS V = +20V, V = 0V GS DS Gate-Source Leakage 100 nA I GSS V = -16V, V = 0V GS DS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage 1.0 3.0 V V V = V , I = 250A GS(TH) DS GS D 5.6 7 V = 10V, I = 9.0A GS D Static Drain-Source On-Resistance m R DS(ON) 8.0 11 V = 4.5V, I = 8.5A GS D Diode Forward Voltage V 0.70 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance C 1,155 iss V = 15V, V = 0V, DS GS 456 Output Capacitance C pF oss f = 1.0MHz Reverse Transfer Capacitance 72 Crss Gate Resistance 1.6 R V = 0V, V = 0V, f =1.0MHz g DS GS 8.4 Total Gate Charge (V = 4.5V) Q GS g 16.7 Total Gate Charge (V = 10V) Q GS g nC V = 15V, I = 9A DD D Gate-Source Charge 2.2 Q gs Gate-Drain Charge 3.5 Q gd Turn-On Delay Time t 3.5 D(ON) 5.5 Turn-On Rise Time t R V = 15V, V = 10V, DD GS ns 13.5 Turn-Off Delay Time t R = 3, I = 9A D(OFF) G D 4.6 Turn-Off Fall Time t F Reverse Recovery Time 19.3 ns tRR I = 1.5A, di/dt = 100A/s F Reverse Recovery Charge 8.6 nC Q RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. 2 of 7 DMT3006LFVQ May 2018 Diodes Incorporated www.diodes.com Document number: DS40799 Rev. 2 - 2 ADVANCED INFORMATION ADVANCED INFORMATION
