STB36NM60ND STMicroelectronics

STB36NM60ND, STW36NM60ND Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II 2 Power MOSFETs (with fast diode) in D PAK and TO-247 packages Datasheet - production data Features V T R DSS J DS(on) Order codes I D max. max. TAB STB36NM60ND 650 V 0.110 29 A STW36NM60ND 3 Designed for automotive applications and 1 3 2 AEC-Q101 qualified 1 100% avalanche tested 2 D PAK TO-247 Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. Internal schematic diagram Applications Automotive switching applications 4 Description These FDmesh II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior 3 switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. - V Table 1. Device summary Order codes Marking Package Packaging 2 STB36NM60ND 36NM60ND D PAK Tape and reel STW36NM60ND 36NM60ND TO-247 Tube October 2013 DocID023785 Rev 3 1/18 This is information on a product in full production. www.st.com 18Contents STB36NM60ND, STW36NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 17 2/18 DocID023785 Rev 3