X-On Electronics has gained recognition as a prominent supplier of STB36NM60ND MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB36NM60ND MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB36NM60ND STMicroelectronics

Name: STB36NM60ND
Brand: STMicroelectronics
SKU: STB36NM60ND_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STB36NM60ND electronic component of STMicroelectronics

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Part No.	STB36NM60ND
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET Auto-grade N-CH 600V 29A FDmesh II 0.097
Datasheet:	STB36NM60ND Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

STB36NM60ND More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 1000 Multiples : 1000	1000 : USD 3.4155	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 8.3915 10 : USD 7.2639 100 : USD 5.7264 500 : USD 4.8724	N/A Obsolete

0 MOQ : 1000 Multiples : 1000	1000 : USD 4.2569	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 7.3008 10 : USD 7.1489 30 : USD 7.0494 100 : USD 6.9482	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 9.803 10 : USD 6.4075	N/A Obsolete

0 MOQ : 184 Multiples : 184	184 : USD 7.0556	N/A Obsolete

0 MOQ : 184 Multiples : 184	184 : USD 7.2694	N/A Obsolete

We are delighted to provide the STB36NM60ND from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB36NM60ND and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STB36NM60ND, STW36NM60ND Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II 2 Power MOSFETs (with fast diode) in D PAK and TO-247 packages Datasheet - production data Features V T R DSS J DS(on) Order codes I D max. max. TAB STB36NM60ND 650 V 0.110 29 A STW36NM60ND 3 Designed for automotive applications and 1 3 2 AEC-Q101 qualified 1 100% avalanche tested 2 D PAK TO-247 Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. Internal schematic diagram Applications Automotive switching applications 4 Description These FDmesh II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior 3 switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. - V Table 1. Device summary Order codes Marking Package Packaging 2 STB36NM60ND 36NM60ND D PAK Tape and reel STW36NM60ND 36NM60ND TO-247 Tube October 2013 DocID023785 Rev 3 1/18 This is information on a product in full production. www.st.com 18Contents STB36NM60ND, STW36NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 17 2/18 DocID023785 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 29 A 29 A
Vds - Drain-Source Breakdown Voltage 650 V 650 V
Rds On - Drain-Source Resistance 110 mOhms 110 mOhms
Transistor Polarity N - Channel N - Channel
Vgs - Gate-Source Breakdown Voltage 25 V 25 V
Vgs th - Gate-Source Threshold Voltage 4 V 4 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 190 W 190 W
Mounting Style Smd/Smt Smd/Smt
Package / Case D2PAK - 2 D2PAK - 2
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 25 V 25 V
Qg - Gate Charge 80.4 nC 80.4 nC
Qualification Aec - Q101 Aec - Q101
Configuration Single Single
Series Stb36nm60nd Stb36nm60nd
Brand Stmicroelectronics Stmicroelectronics
Fall Time 61.8 ns 61.8 ns
Rise Time 53.4 ns 53.4 ns
Factory Pack Quantity : 1000 1000
Typical Turn-Off Delay Time 111 ns 111 ns
Transistor Type 1 N - Channel 1 N - Channel
Cnhts 8541210000 8541210000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000
Typical Turn-On Delay Time 30 ns 30 ns