STB80NF55L-06T4 STMicroelectronics

STB80NF55L-06 STP80NF55L-06 N-CHANNEL 55V - 0.005 - 80A DPAK/TO -220 STripFET II POWER MOSFET TYPE V R I DSS DS(on) D STB80NF55L-06 55 V < 0.0065 80 A STP80NF55L-06 55 V < 0.0065 80 A TYPICAL R (on) = 0.005 DS LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE 3 2 SURFACE-MOUNTING D PAK (TO-263) 3 1 2 POWER PACKAGE IN TUBE (NO SUFFIX) OR 1 2 D PAK IN TAPE & REEL (SUFFIX T4) TO-220 TO-263 (Suffix T4) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis uniqueSingle Feature Siz strip-based process. The resulting transistor shows extremely high packing density for low on- INTERNAL SCHEMATIC DIAGRAM resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 55 V DS GS V Drain-gate Voltage (R = 20 k) 55 V DGR GS V Gate- source Voltage 16 V GS I ( ) Drain Current (continuous) at T = 25C 80 A D C I Drain Current (continuous) at T = 100C 80 A D C I () Drain Current (pulsed) 320 A DM P Total Dissipation at T = 25C 300 W tot C Derating Factor 2 W/C (1) dv/dt Peak Diode Recovery voltage slope 7 V/ns (2) E Single Pulse Avalanche Energy 1.3 J AS T Storage Temperature stg -55 to 175 C T Operating Junction Temperature j ( ) Current limited by the package (1) I 80A, di/dt 400A/s, V V , T T SD DD (BR)DSS j JMAX o () Pulse width limited safe operating area (2) Starting T = 25 C, I = 40A, V = 35V j D DD January 2003 1/10 NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P80NF55L-06 B80NF55L-06 STB80NF55L-06 STP80NF55L-06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.5 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l ELECTRICAL CHARACTERISTICS (T = 25 C UNLESS OTHERWISE SPECIFIED) CASE OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit I = 250 A, V = 0 V Drain-source 55 V D GS (BR)DSS Breakdown Voltage Zero Gate Voltage V = Max Rating I DS 1 A DSS Drain Current (V = 0) V = Max Rating T = 125C 10 A GS DS C Gate-body Leakage V = 16 V I 100 nA GS GSS Current (V = 0) DS (*) ON Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V = V I = 250 A1V GS(th) DS GS D V = 10 V I = 40 A R Static Drain-source On 0.005 0.0065 GS D DS(on) Resistance V = 5 V I = 40 A 0.0055 0.008 GS D DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit (*) g Forward Transconductance V = 15 V I = 40 A 150 S fs DS D V = 25V f = 1 MHz V = 0 C Input Capacitance 4850 pF iss DS GS C Output Capacitance 1040 pF oss Reverse Transfer 375 pF C rss Capacitance 2/10