X-On Electronics has gained recognition as a prominent supplier of STB85NF55T4 MOSFET across the USA, India, Europe, Australia, and various other global locations. STB85NF55T4 MOSFET are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

STB85NF55T4 STMicroelectronics

STB85NF55T4 electronic component of STMicroelectronics
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Part No.STB85NF55T4
Manufacturer: STMicroelectronics
Category: MOSFET
Description: STMicroelectronics MOSFET N-Ch 55 Volt 80 Amp
Datasheet: STB85NF55T4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.0081 ea
Line Total: USD 1008.1

Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Wed. 31 Jul to Tue. 06 Aug
MOQ : 1000
Multiples : 1000
1000 : USD 2.5168
2000 : USD 2.4908
3000 : USD 2.4661
4000 : USD 2.4414
5000 : USD 2.4167
6000 : USD 2.3933
10000 : USD 2.3686
20000 : USD 2.3452
50000 : USD 2.3218

0
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 5.7474
10 : USD 2.0732
25 : USD 1.9603
100 : USD 1.6729
500 : USD 1.3753
1000 : USD 1.1289
2000 : USD 1.0879

0
Ship by Wed. 31 Jul to Tue. 06 Aug
MOQ : 1000
Multiples : 1000
1000 : USD 1.0081

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the STB85NF55T4 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB85NF55T4 and other electronic components in the MOSFET category and beyond.

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STB85NF55T4, STP85NF55 Datasheet Automotive-grade N-channel 55 V, 6.2 m typ., 80 A, STripFET II Power MOSFETs in DPAK and TO-220 packages Features V R max. I Type DS DS(on) D TAB TAB STB85NF55T4 55 V 8.0 m 80 A STP85NF55 3 1 3 2 D PAK TO-220 2 1 AEC-Q101 qualified Exceptional dv/dt capability 100% avalanche tested D(2, TAB) Low gate charge Applications Switching applications G(1) Description S(3) These Power MOSFETs have been developed using STMicroelectronics unique AM01475v1 noZen STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STB85NF55T4 STP85NF55 Product summary Order code STB85NF55T4 Marking B85NF55 Package DPAK Packing Tape and reel Order code STP85NF55 Marking P85NF55 Package TO-220 Packing Tube DS2569 - Rev 12 - January 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB85NF55T4, STP85NF55 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 55 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 80 A C (1) I D Drain current (continuous) at T = 100 C 80 A C (2) I Drain current (pulsed) 320 A DM P Total power dissipation at T = 25 C 300 W TOT C Derating factor 2.0 W/C (3) E Single-pulse avalanche energy 980 mJ AS (4) dv/dt Peak diode recovery voltage slope 10 V/ns T Storage temperature range stg -55 to 175 C T Operating junction temperature range j 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. Starting T = 25 C, I = 40 A, V = 37.5 V J D DD 4. I 80 A, di/dt 300 A/s, V V , T T SD DD (BR)DSS J JMAX Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb DS2569 - Rev 12 page 2/18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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