STB9NK60ZT4 STMicroelectronics

STB9NK60Z, STP9NK60Z, STP9NK60ZFP N-channel 600 V, 0.85 typ., 7 A Zener-protected SuperMESH Power MOSFET in DPAK, TO-220 and TO-220FP packages Datasheet production data Features TAB TAB Order codes V R I P DS DS(on) max D TOT 3 STB9NK60ZT4 3 1 2 125 W 600 1 STP9NK60Z 0.95 7 A 2 V D PAK TO-220 STP9NK60ZFP 30 W Extremely high dv/dt capability Improved ESD capability 3 100% avalanche tested 2 1 Gate charge minimized TO-220FP Very low intrinsic capacitances Applications Figure 1. Internal schematic diagram , TAB Switching applications Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH technology, achieved through optimization of ST s well established strip-based PowerMESH layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. SC15010 Table 1. Device summary Order codes Marking Package Packaging 2 STB9NK60ZT4 B9NK60Z D PAK Tube STP9NK60Z P9NK60Z TO-220 STP9NK60ZFP P9NK60ZFP TO-220FP January 2013 Doc ID 8799 Rev 3 1/19 This is information on a product in full production. www.st.com 19Contents STB9NK60Z, STP9NK60Z, STP9NK60ZFP Contents 1 Electrical ratings 3 2 Electrical characteristics . 5 2.1 Electrical characteristics (curves) 7 3 Test circuits . 10 4 Package mechanical data 11 5 Revision history . 18 2/19 Doc ID 8799 Rev 3